參數(shù)資料
型號(hào): GFP70N03
廠商: Electronic Theatre Controls, Inc.
英文描述: N-Channel Enhancement-Mode MOSFET
中文描述: N溝道增強(qiáng)型MOSFET
文件頁(yè)數(shù): 2/5頁(yè)
文件大?。?/td> 92K
代理商: GFP70N03
Electrical Characteristics
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250
μ
A
V
DS
= V
GS
, I
D
= 250
μ
A
30
V
Gate Threshold Voltage
V
GS(th)
1.0
3.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0V, V
GS
= ±20V
±100
nA
Zero Gate Voltage Drain Current
On-State Drain Current
(2)
I
DSS
V
DS
= 30V, V
GS
= 0V
1
μ
A
I
D(on)
V
DS
5V, V
GS
= 10V
70
A
Drain-Source On-State Resistance
(2)
R
DS(on)
V
GS
= 10V, I
D
= 35A
6
8
m
V
GS
= 4.5V, I
D
= 30A
9
11
Forward Transconductance
(2)
g
fs
V
DS
= 15V, I
D
= 35A
61
S
Dynamic
Total Gate Charge
Q
g
V
DS
=15V, V
GS
=5V, I
D
=35A
34
48
63
95
Gate-Source Charge
Q
gs
V
DS
= 15V, V
GS
= 10V
I
D
= 35A
11
nC
Gate-Drain Charge
Q
gd
11
Turn-On Delay Time
t
d(on)
V
DD
= 15V, R
L
= 15
I
D
1A, V
GEN
= 10V
R
G
= 6
9
14
Rise Time
t
r
9
14
Turn-Off Delay Time
t
d(off)
100
167
ns
Fall Time
t
f
31
62
Input Capacitance
C
iss
V
GS
= 0V
V
DS
= 15V
f = 1.0MH
Z
3400
Output Capacitance
C
oss
618
pF
Reverse Transfer Capacitance
C
rss
300
Source-Drain Diode
Max Diode Forward Current
Diode Forward Voltage
(2)
I
S
35
A
V
SD
I
S
= 35A, V
GS
= 0V
0.9
1.3
V
Notes:
(1) Maximum DC current limited by the package
(2) Pulse test; pulse width
300
μ
s,
duty cycle
2%
GFP70N03
N-Channel Enhancement-Mode MOSFET
G
D
S
V
IN
V
DD
V
GEN
R
G
R
D
V
OUT
DUT
Input, V
IN
t
d(on)
Output, V
OUT
t
on
t
r
t
d(off)
t
off
t
f
INVERTED
90%
10%
10%
90 %
50%
50%
10%
90%
PULSE WIDTH
Switching
Test Circuit
Switching
Waveforms
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