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參數(shù)資料
| 型號(hào)： | FZ1200R33KF2C-B5 |
| 廠商： | EUPEC |
| 英文描述： | SANYO IC 15-PIN SIP |
| 中文描述： | IGBT的- Wechselrichter / IGBT的逆變器 |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大?。?/td> | 253K |
| 代理商： | FZ1200R33KF2C-B5 |
3
Technische Information / technical information
FZ1200R33KF2C
IGBT-modules
IGBT-Module
prepared by: Jürgen Biermann
approved by: Christoph Lübke
date of publication: 3/18/2003
revision: 2.0
Vorlufige Daten
preliminary data
Modul / module
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min
V￥
6,0
kV
Teilentladungs Aussetzspannung
partial discharge extinction voltage
RMS, f = 50 Hz, Q ú 10 pC (acc. to IEC 1287)
V￥
2,6
kV
Kollektor-Emitter-Gleichsperrspannung
DC stability
TY = 25°C, 100 fit
V
1800
V
Material Modulgrundplatte
material of module baseplate
AlSiC
Material für innere Isolation
material for internal insulation
AlN
Kriechstrecke
creepage distance
Kontakt - Kühlkrper / terminal to heatsink
Kontakt - Kontakt / terminal to terminal
32,0
32,0
mm
Luftstrecke
clearance distance
Kontakt - Kühlkrper / terminal to heatsink
Kontakt - Kontakt / terminal to terminal
19,0
19,0
mm
Vergleichszahl der Kriechwegbildung
comparative tracking index
CTI
> 400
min.
typ.
max.
übergangs-Wrmewiderstand
thermal resistance, case to heatsink
pro Modul / per module
eèùút = 1 W/(m*K) / etèùt = 1 W/(m*K)
Rúì
4,00
K/kW
Modulinduktivitt
stray inductance module
Lù
10
nH
Modulleitungswiderstand,
Anschlüsse - Chip
module lead resistance,
terminals - chip
T = 25°C, pro Zweig / per arm
Róó
0,12
m
Hchstzulssige Sperrschichttemperatur
maximum junction temperature
TY èà
150
°C
Temperatur im Schaltbetrieb
temperature under switching conditions
TY ó
-40
125
°C
Lagertemperatur
storage temperature
Tùú
-40
125
°C
Anzugsdrehmoment f. mech. Befestigung
mounting torque
Schraube / screw M6
M
4,25
-
5,75
Nm
Anzugsdrehmoment f. elektr. Anschlüsse
terminal connection torque
Schraube / screw M4
Schraube / screw M8
M
1,8
8,0
-
-
2,1
10
Nm
Nm
Gewicht
weight
G
1500
g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine
Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehrigen technischen Erluterungen.
This technical information specifies semiconductor devices but guarantees no characteristics.
It is valid with the appropriate technical explanations.
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| FZ1200R33KL2 | 制造商:EUPEC 制造商全稱(chēng):EUPEC 功能描述:Hochstzulassige Werte / Maximum rated values |
| FZ1200R33KL2C | 功能描述:IGBT 模塊 N-CH 3.3KV 2.3KA RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FZ1200R33KL2C_B5 | 功能描述:IGBT 模塊 N-CH 3.3KV 2.3KA RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FZ1200R33KL2C-B5 | 制造商:EUPEC 制造商全稱(chēng):EUPEC 功能描述:IGBT-Wechselrichter / IGBT-inverter |
| FZ1200R45HL3 | 制造商:Infineon Technologies AG 功能描述: |
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