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參數(shù)資料
| 型號(hào)： | FMMT497 |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | NPN SILICON PLANAR HIGH VOLTAGE HIGH PERFORMANCE TRANSISTOR |
| 中文描述： | 500 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SOT-23, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 118K |
| 代理商： | FMMT497 |
SOT23 NPN SILICON PLANAR HIGH VOLTAGE
HIGH PERFORMANCE TRANSISTOR
ISSUE 3 DECEMBER 1995
%
COMPLIMENTARY TYPE
FMMT597
PARTMARKING DETAIL
497
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
300
V
Collector-Emitter Voltage
V
CEO
300
V
Emitter-Base Voltage
V
EBO
5
V
Continuous Collector Current
I
C
500
mA
Peak Pulse Current
I
CM
1
A
Base Current
I
B
200
mA
Power Dissipation at T
amb
=25°C
P
tot
500
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
I
C
=100
μ
A
Collector-Base
Breakdown Voltage
V
(BR)CBO
300
V
Collector-Emitter
Breakdown Voltage
V
CEO(sus)
300
V
I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
V
I
E
=100
μ
A
Collector Cut-Off Current
I
CBO
I
CES
I
EBO
V
CE(sat)
100
nA
V
CB
=250V
V
CES
=250V
V
EB
=4V
I
C
=100mA, I
B
=10mA
I
C
=250mA, I
B
=25mA
I
C
=250mA, I
B
=25mA
Collector Cut-Off Current
100
nA
Emitter Cut-Off Current
100
nA
Collector-Emitter
Saturation Voltage
0.2
0.3
V
V
Base-Emitter
Saturation Voltage
V
BE(sat)
1.0
V
Base-Emitter
Turn On Voltage
V
BE(on)
1.0
V
I
C
=250mA, V
CE
=10V
Static Forward Current
Transfer Ratio
h
FE
100
80
20
300
I
C
=1mA, V
=10V
I
C
=100mA, V
CE
=10V*
I
C
=250mA, V
CE
=10V*
I
=50mA, V
CE
=10V
f=100MHz
Transition Frequency
f
T
75
MHz
Collector-Base
Breakdown Voltage
C
obo
5
pF
V
CB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
FMMT497
C
B
E
SOT23
3 - 125
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| FMMT497_06 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:SOT23 NPN silicon planar high voltage high performance transistor |
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| FMMT497TC | 功能描述:兩極晶體管 - BJT NPN Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FMMT5087 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:Small Signal Transistor |
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