- 您現(xiàn)在的位置：買賣IC網 > PDF目錄377117 > FMMT493ATC (ZETEX PLC) IGBT Module; Continuous Collector Current, Ic:150A; Collector Emitter Saturation Voltage, Vce(sat):3.2V; Power Dissipation, Pd:960W; Collector Current:150A; Collector Emitter Voltage, Vceo:1.2kV; Leaded Process Compatible:No RoHS Compliant: No PDF資料下載
參數資料
| 型號： | FMMT493ATC |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | IGBT Module; Continuous Collector Current, Ic:150A; Collector Emitter Saturation Voltage, Vce(sat):3.2V; Power Dissipation, Pd:960W; Collector Current:150A; Collector Emitter Voltage, Vceo:1.2kV; Leaded Process Compatible:No RoHS Compliant: No |
| 中文描述： | 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數： | 2/6頁 |
| 文件大小： | 163K |
| 代理商： | FMMT493ATC |
FMMT493A
ISSUE 1 - OCTOBER 2001
2
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
Collector - Base
Breakdown Voltage
V
(BR)CBO
120
V
I
C
= 100 A
Collector - Emitter
Breakdown Voltage
V
CEO(SUS)
60
V
I
C
= 10mA*
Emitter - Base
Breakdown Voltage
V
(BR)EBO
5
V
I
E
= 100 A
Collector Cut-Off Current
I
CBO
100
nA
V
CB
= 45V
Collector Cut-Off Current
I
CES
100
nA
V
CES
= 45V
Emitter Cut-Off Current
I
EBO
100
nA
V
EB
= 4V
Collector - Emitter
Saturation Voltage
V
CE(SAT)
0.25
0.5
V
V
I
C
= 500mA, I
B
= 50mA
I
C
= 1A, I
B
= 100mA
Base - Emitter Saturation
Voltage
V
BE(SAT)
1.15
V
I
C
=1A, I
B
= 100mA
Base Emitter Turn On
Voltage
V
BE(ON)
1.0
V
I
C
= 1A, V
CE
- 10V
Static Forward Current
Transfer Ratio
h
FE
300
500
300
100
20
1200
I
C
= 1mA, V
CE
= 10V
I
C
= 150mA, V
CE
= 10V
I
C
= 250mA, V
CE
= 10V
I
C
= 500mA, V
CE
= 10V
I
C
= 1A, V
CE
= 10V
Transition Frequency
f
T
150
Mhz
I
C
= 50mA, V
CE
= 10V
f = 100MHz
Collector - Base
Breakdown Voltage
C
OBO
10
pF
V
CB
= 10V, f = 1MHz
ELECTRICAL CHARACTERISTICS (at Tamb = 25 C).
*Measured under pulsed conditions. Pulse width = 300 s. Duty Cycle <2%
相關PDF資料 |
PDF描述 |
|---|---|
| FMMT493A | 60V NPN SILICON PLANAR MEDIUM POWER PLANAR TRANSISTOR |
| FMMT493 | NPN SILICON PLANAR MEDIUM POWER TRANSISTOR |
| FMMT494 | NPN SILICON PLANAR MEDIUM POWER TRANSISTOR |
| FMMT495 | NPN SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR |
| FMMT497 | NPN SILICON PLANAR HIGH VOLTAGE HIGH PERFORMANCE TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FMMT493QTA | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:100V NPN MEDIUM POWER TRANSISTOR IN SOT23 |
| FMMT493TA | 功能描述:兩極晶體管 - BJT NPN Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FMMT493TA-CUT TAPE | 制造商:DIODES 功能描述:FMMT493 Series NPN 1 A 100 V SMT Silicon Medium Power Transistor - SOT-23 |
| FMMT493TC | 功能描述:兩極晶體管 - BJT NPN Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FMMT494 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復。