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參數(shù)資料
| 型號： | FM130-L |
| 廠商： | 美麗微半導(dǎo)體有限公司 |
| 英文描述： | CABLE ASSEM 2MM 40PS SGL END 12,1 |
| 中文描述： | 肖特基二極管芯片-硅外延式龍門 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 68K |
| 代理商： | FM130-L |
0.1
1.0
.01
10
50
RATING AND CHARACTERISTIC CURVES (FM120-L THRU FM140-L)
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT,(A)
FIG.4-TYPICAL JUNCTION CAPACITANCE
REVERSE VOLTAGE,(V)
JUNCTION CAPACITANCE,(pF)
INSTANTANEOUS FORWARD CURRENT,(A)
FORWARD VOLTAGE,(V)
Pulse Width 300us
1% Duty Cycle
0.2
0.4
0.6
0.8
1.0
1.2
350
300
250
200
150
100
50
0
.01 .05 .1 .5 1 5 10 50 100
.1 .3 .5 .7 .9 1.1 1.3 1.5
3.0
.1
1.0
10
100
FIG.5 - TYPICAL REVERSE
CHARACTERISTICS
REVERSE LEAKAGE CURRENT, (mA)
0 20 40 60 80 100 120 140
.01
Tj=75 C
Tj=25 C
Tj=25 C
AMBIENT TEMPERATURE,( C)
0
0
20
40
60
80
100
120
140
160
180
200
FIG.2-TYPICAL FORWARD
CHARACTERISTICS
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
0
12
6
18
30
24
NUMBER OF CYCLES AT 60Hz
1
10
5
50
100
Tj=25 C
8.3ms Single Half
Sine Wave
JEDEC method
PEAK FORWARD SURGE CURRENT,(A)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FM140-L | CONN HEADER .100 64PS DL TIN PCB |
| FM120-L | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM140-MH-1 | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM140-N | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM130-N | CABLE ASSEM 2MM 50POS F-F 12,1 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FM130-LN | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM130-M | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Silicon epitaxial planer type |
| FM130-MH | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM130-M-R | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM130-N | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
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