參數(shù)資料
型號: FDP16N50
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 500V N-Channel MOSFET
中文描述: 16 A, 500 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220, 3 PIN
文件頁數(shù): 1/10頁
文件大小: 1004K
代理商: FDP16N50
2007 Fairchild Semiconductor Corporation
FDP16N50 / FDPF16N50 Rev. B
1
www.fairchildsemi.com
F
February 2007
UniFET
TM
FDP16N50 / FDPF16N50
500V N-Channel MOSFET
Features
16A, 500V, R
DS(on)
= 0.38
@V
GS
= 10 V
Low gate charge ( typical 32 nC)
Low C
rss
( typical 20 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
Absolute Maximum Ratings
Thermal Characteristics
TO-220
FDP Series
G
S
D
TO-220F
FDPF Series
G
S
D
D
G
S
Symbol
Parameter
FDP16N50
FDPF16N50
Unit
V
DSS
I
D
Drain-Source Voltage
500
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
16
9.6
16 *
9.6
A
A
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
(Note 1)
64
64
A
Gate-Source voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
780
mJ
Avalanche Current
(Note 1)
16
A
Repetitive Avalanche Energy
(Note 1)
20
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
200
1.59
52
0.41
W
W/
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
°
C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature
300
°
C
Symbol
Parameter
FDP16N50
FDPF16N50
Unit
R
θ
JC
R
θ
CS
R
θ
JA
Thermal Resistance, Junction-to-Case
0.63
2.4
°
C/W
Thermal Resistance, Case-to-Sink Typ.
0.5
--
°
C/W
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°
C/W
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