參數(shù)資料
型號(hào): FDD8896
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel PowerTrench MOSFET
中文描述: 17 A, 30 V, 0.068 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝: DPAK-3
文件頁(yè)數(shù): 3/11頁(yè)
文件大小: 130K
代理商: FDD8896
2004 Fairchild Semiconductor Corporation
FDD8896 / FDU8896 Rev. C
F
Typical Characteristics
T
C
= 25°C unless otherwise noted
Figure 1. Normalized Power Dissipation vs Case
Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Figure 3. Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
0
25
50
75
100
25
50
75
100
125
150
175
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
CURRENT LIMITED
BY PACKAGE
0.1
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.01
2
t, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
T
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
0.5
0.2
0.1
0.05
0.02
0.01
DUTY CYCLE - DESCENDING ORDER
SINGLE PULSE
100
1000
30
I
D
,
t, PULSE WIDTH (s)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
175 - T
C
150
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
V
GS
= 4.5V
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