參數(shù)資料
型號: FDB8444
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel PowerTrench㈢ MOSFET 40V, 70A, 5.5mOhm
中文描述: 70 A, 40 V, 9.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝: ROHS COMPLIANT PACKAGE-3
文件頁數(shù): 4/7頁
文件大?。?/td> 280K
代理商: FDB8444
F
FDB8444 Re
v A2
(W)
www.fairchildsemi.com
4
Typical Characteristics
Figure 1. Normalized Power Dissipation vs Case
Temperature
0
25
50
75
100
125
150
175
0.0
0.2
0.4
0.6
0.8
1.0
1.2
P
T
C
, CASE TEMPERATURE
(
o
C
)
Figure 2.
25
50
75
100
125
150
175
0
20
40
60
80
100
CURRENT LIMITED
BY WIRE
V
GS
= 10V
T
C
, CASE TEMPERATURE
(
o
C
)
I
D
,
Maximum Continuous Drain Current vs
Case Temperature
Figure 3.
10
-5
10
-4
10
t, RECTANGULAR PULSE DURATION(s)
-3
10
-2
10
-1
10
0
10
1
0.01
0.1
1
SINGLE PULSE
D = 0.50
0.20
0.10
0.05
0.02
0.01
N
I
θ
J
DUTY CYCLE - DESCENDING ORDER
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
10
-5
10
-4
10
t, RECTANGULAR PULSE DURATION(s)
-3
10
-2
10
-1
10
0
10
1
10
100
1000
V
GS
= 10V
SINGLE PULSE
I
D
,
P
5000
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
175 - T
C
150
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
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