參數(shù)資料
型號： K9F2808U0B-V
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 16M x 8 Bit NAND Flash Memory
中文描述： 1,600 × 8位NAND閃存
文件頁數(shù)： 28/29頁
文件大?。?/td> 304K
代理商： K9F2808U0B-V
FLASH MEMORY
28
K9F2808U0B-YCB0,YIB0
K9F2808U0B-DCB0,DIB0
K9F2808Q0B-DCB0,DIB0
K9F2808U0B-VCB0,VIB0
READY/BUSY
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random
read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command reg-
ister or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin
is an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B) and
current drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig 13). Its value can be
determined by the following guidance.
V
CC
R/B
open drain output
Device
GND
Rp
t
I
Rp(ohm)
Fig 13 Rp vs tr ,tf & Rp vs ibusy
Ibusy
tr
ibusy
Busy
Ready Vcc
@ Vcc = 3.3V, Ta = 25
°
C , C
L
= 100pF
VOH
tf
tr
1K
2K
3K
4K
100n
200n
300n
3m
2m
1m
100
tf
200
300
400
3.6
3.6
3.6
3.6
2.4
1.2
0.8
0.6
VOL
Rp(min, 1.8V part) =
V
CC
(Max.) - V
OL
(Max.)
I
OL
+
Σ
I
L
=
1.85V
3mA
+
Σ
I
L
where I
L
is the sum of the input currents of all devices tied to the R/B pin.
Rp value guidance
Rp(max) is determined by maximum permissible limit of tr
Rp(min, 3.3V part) =
V
CC
(Max.) - V
OL
(Max.)
I
OL
+
Σ
I
L
=
3.2V
8mA
+
Σ
I
L
1.8V device - V
OL
: 0.1V, V
OH
: V
CC
q-0.1V
3.3V device - V
OL
: 0.4V, V
OH
: 2.4V
t
I
Rp(ohm)
Ibusy
tr
@ Vcc = 1.8V, Ta = 25
°
C , C
L
= 30pF
1K
2K
3K
4K
100n
200n
300n
3m
2m
1m
30
tf
60
90
120
1.7
1.7
1.7
1.7
1.7
0.85
0.57
0.43
C
L
相關PDF資料
PDF描述
K9F2808U0B-VCB0 16M x 8 Bit NAND Flash Memory
K9F2808U0B-Y 16M x 8 Bit NAND Flash Memory
K9F2808U0C-VCB0 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
K9F2808U0C-DCB0 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
K9F2808U0C-VIB0 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
相關代理商/技術參數(shù)
參數(shù)描述
K9F2808U0B-VCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808U0B-VIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808U0B-Y 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808U0B-YCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808U0B-YIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
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