參數(shù)資料
型號(hào): EN29LV320T-90TC
廠商: Eon Silicon Solution Inc.
英文描述: 32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
中文描述: 32兆位(4096K × 8位/ 2048K x 16位)閃存引導(dǎo)扇區(qū)閃存,CMOS 3.0伏,只
文件頁數(shù): 33/49頁
文件大?。?/td> 437K
代理商: EN29LV320T-90TC
Test Conditions
This Data Sheet may be revised by subsequent versions 2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. E, Issue Date: 2006/05/16
EN29LV320
Test Specifications
Notes:
1. Vcc=3.0 – 3.6 V for 70ns read operation
Test Conditions
Output Load
Output Load Capacitance, C
B
L
Input Rise and Fall times
Input Pulse Levels
Input timing measurement
reference levels
Output timing measurement
reference levels
-70
-90
Unit
pF
ns
V
1 TTL Gate
100
5
0.0-3.0
B
30
5
0.0-3.0
1.5
1.5
V
1.5
1.5
V
Device under Test
C
L
6.2 k
2.7 k
3.3 V
Note: Diodes are IN3064 or equivalent
相關(guān)PDF資料
PDF描述
EN29LV320T-90TCP 32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV320T-90TI 32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV320T-90TIP 32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV320B-90TI 32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
EN29LV320B-90TIP 32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
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