參數(shù)資料
型號(hào): EN29LV320T-90TC
廠商: Eon Silicon Solution Inc.
英文描述: 32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
中文描述: 32兆位(4096K × 8位/ 2048K x 16位)閃存引導(dǎo)扇區(qū)閃存,CMOS 3.0伏,只
文件頁(yè)數(shù): 16/49頁(yè)
文件大?。?/td> 437K
代理商: EN29LV320T-90TC
This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to
address 55h in word mode (or address AAh in byte mode), any time the device is ready to read
array data.
The system can read CFI information at the addresses given in Tables 5-8.In word mode, the upper
address bits (A7–MSB) must be all zeros. To terminate reading CFI data, the system must write the
reset command.
The system can also write the CFI query command when the device is in the autoselect mode. The
device enters the CFI query mode and the system can read CFI data at the addresses given in
Tables 5–8. The system must write the reset command to return the device to the autoselect mode.
Table 5. CFI Query Identification String
Addresses
(Word Mode)
(Byte Mode)
Data
10h
11h
12h
24h
0059h
13h
14h
28h
0000h
15h
16h
2Ch
0000h
17h
18h
30h
0000h
19h
1Ah
34h
0000h
Table 6. System Interface String
Addresses
(Word Mode)
(Byte Mode)
Data
0027h
Vcc Min (write/erase)
DQ7-DQ4: volt, DQ3 –DQ0: 100 millivolt
0036h
Vcc Max (write/erase)
DQ7-DQ4: volt, DQ3 –DQ0: 100 millivolt
1Dh
3Ah
0000h
Vpp Min. voltage (00h = no Vpp pin present)
1Eh
3Ch
0000h
Vpp Max. voltage (00h = no Vpp pin present)
1Fh
3Eh
0004h
Typical timeout per single byte/word write 2
P
N
20h
40h
0000h
Typical timeout for Min, size buffer write 2
P
N
21h
42h
000Ah Typical timeout per individual block erase 2
P
N
22h
44h
0000h
Typical timeout for full chip erase 2
P
N
23h
46h
0005h
Max. timeout for byte/word write 2
P
N
24h
48h
0000h
Max. timeout for buffer write 2
P
N
25h
4Ah
0004h
Max. timeout per individual block erase 2
P
N
26h
4Ch
0000h
Max timeout for full chip erase 2
P
N
Table 7. Device Geometry Definition
Addresses
(Word mode)
(Byte Mode)
Data
27h
4Eh
0016h
Device Size = 2
P
N
28h
29h
52h
0000h
This Data Sheet may be revised by subsequent versions 2004 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. E, Issue Date: 2006/05/16
EN29LV320
Adresses
Description
20h
22h
0051h
0052h
Query Unique ASCII string “QRY”
26h
0002h
Primary OEM Command Set
2Ah
0040h
Address for Primary Extended Table
2Eh
0000h
Alternate OEM Command set (00h = none exists)
32h
0000h
Address for Alternate OEM Extended Table (00h = none exists)
Addresses
Description
1Bh
36h
1Ch
38h
P
μ
S
P
μ
S (00h = not supported)
P
ms
P
ms (00h = not supported)
P
times typical
P
times typical
P
times typical
P
times typical (00h = not supported)
Addresses
Description
P
bytes
50h
0002h
Flash Device Interface description (refer to CFI publication 100)
相關(guān)PDF資料
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EN29LV320T-90TCP 32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
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