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參數(shù)資料
| 型號： | EN29LV010-70JIP |
| 廠商： | Eon Silicon Solution Inc. |
| 英文描述： | 1 Megabit (128K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory |
| 中文描述： | 1兆位（128K的× 8位）統(tǒng)一部門，3.0伏的CMOS只閃存 |
| 文件頁數(shù)： | 7/35頁 |
| 文件大?。?/td> | 416K |
| 代理商： | EN29LV010-70JIP |
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This Data Sheet may be revised by subsequent versions 2003 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. B, Issue Date: 2004/01/05
EN29LV010
whichever happens later. All data is latched on the rising edge of WE# or CE#, whichever happens
first. The system is not required to provide further controls or timings. The device automatically
provides internally generated program / erase pulses and verifies the programmed /erased cells’
margin. The host system can detect completion of a program or erase operation by reading the
DQ[7] (Data# Polling) and DQ[6] (Toggle) status bits.
The ‘Command Definitions’ section of this document provides details on the specific device
commands implemented in the EN29LV010.
Sector Protection/Unprotection
The hardware sector protection feature disables both program and erase operations in any sector. The
hardware sector unprotection feature re-enables both program and erase operations in previously
protected sectors.
Sector protection/unprotection is intended only for programming equipment. This method requires
V
ID
be applied to both OE# and A9 pin and non-standard microprocessor timings are used. This
method is described in a separate document called EN29LV010 Supplement,
which can be obtained
by contacting a representative of Eon Silicon Solution, Inc.
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device energy consumption. The device automatically
enables this mode when addresses remain stable for t
acc
+ 30ns. The automatic sleep mode is
independent of the CE#, WE# and OE# control signals. Standard address access timings provide
new data when addresses are changed. While in sleep mode, output is latched and always
available to the system. ICC
4
in the DC Characteristics table represents the automatic sleep more
current specification.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EN29LV010-70SC | 1 Megabit (128K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory |
| EN29LV010-70SCP | 1 Megabit (128K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory |
| EN29LV010-70SI | 1 Megabit (128K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory |
| EN29LV010-70SIP | 1 Megabit (128K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory |
| EN29LV010-70TC | 1 Megabit (128K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EN29LV010-70SCP | 制造商:EON SILICON SOLUTION INC 功能描述:1M(128K*8)70NS 32TSOP C-TEMPLF |
| EN29LV160AB-70TCP | 制造商:EON-CFEON 功能描述: |
| EN29LV160AT-70TCP | 制造商:EON SILICON SOLUTION INC 功能描述:EN29LV160A Series, 16 Mbit 70 NS 48 TSOP Top Boot Sector 3 V NOR Flash |
| EN29LV160BB-70BIP | 制造商:EON SILICON SOLUTION INC 功能描述:EN29LV160 Series 16 Mbit (2 M x 8) 3.6 V 70 ns Boot Sector NOR Flash 制造商:Eon Silicon Solution Inc 功能描述:EN29LV160 Series 16 Mbit (2 M x 8) 3.6 V 70 ns Boot Sector NOR Flash |
| EN29LV160BT-70TIP | 制造商:EON SILICON SOLUTION INC 功能描述:EN29LV160 Series 16 Mbit (2 M x 8) 3.6 V 70 ns Boot Sector NOR Flash |
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