參數資料
型號: EN29LV010-70JIP
廠商: Eon Silicon Solution Inc.
英文描述: 1 Megabit (128K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
中文描述: 1兆位(128K的× 8位)統(tǒng)一部門,3.0伏的CMOS只閃存
文件頁數: 25/35頁
文件大?。?/td> 416K
代理商: EN29LV010-70JIP
This Data Sheet may be revised by subsequent versions 2003 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. B, Issue Date: 2004/01/05
EN29LV010
Table 11. ERASE AND PROGRAMMING PERFORMANCE
Limits
Max
Parameter
Typ
Unit
Comments
Sector Erase Time
0.5
10
sec
Chip Erase Time
4
80
sec
Excludes 00H programming prior
to erasure
Byte Programming Time
8
300
μs
Chip Programming Time
1
3
sec
Excludes system level overhead
Erase/Program Endurance
100K
cycles
Minimum 100K cycles
Table 12. LATCH UP CHARACTERISTICS
Parameter Description
Input voltage with respect to V
ss
on all pins except I/O pins
(including A9 and
OE
)
Min
Max
-1.0 V
12.0 V
Input voltage with respect to V
ss
on all I/O Pins
-1.0 V
Vcc + 1.0 V
Vcc Current
-100 mA
100 mA
Note :
These are latch up characteristics and the device should never be put under these conditions. Refer to Absolute
Maximum ratings for the actual operating limits.
Table 13. DATA RETENTION
Parameter Description
Test Conditions
Min
Unit
150°C
10
Years
Minimum Pattern Data Retention Time
125°C
20
Years
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EN29LV010-70SC 1 Megabit (128K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
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