參數(shù)資料
型號: EN29LV010-70JIP
廠商: Eon Silicon Solution Inc.
英文描述: 1 Megabit (128K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
中文描述: 1兆位(128K的× 8位)統(tǒng)一部門,3.0伏的CMOS只閃存
文件頁數(shù): 21/35頁
文件大?。?/td> 416K
代理商: EN29LV010-70JIP
This Data Sheet may be revised by subsequent versions 2003 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. B, Issue Date: 2004/01/05
EN29LV010
Test Conditions
Test Specifications
Test Conditions
Output Load
Output Load Capacitance, C
L
Input Rise and Fall times
Input Pulse Levels
Input timing measurement
reference levels
Output timing measurement
reference levels
-45R
-55
1 TTL Gate
30
5
0.0-3.0
-70
-90
Unit
pF
ns
V
30
5
100
5
0.0-3.0
100
5
0.0-3.0
0.0-3.0
1.5
1.5
1.5
1.5
V
1.5
1.5
1.5
1.5
V
Device Under Test
C
L
6.2 k
2.7 k
3.3 V
Note: Diodes are IN3064 or equivalent
相關(guān)PDF資料
PDF描述
EN29LV010-70SC 1 Megabit (128K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
EN29LV010-70SCP 1 Megabit (128K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
EN29LV010-70SI 1 Megabit (128K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
EN29LV010-70SIP 1 Megabit (128K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
EN29LV010-70TC 1 Megabit (128K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
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