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參數(shù)資料
| 型號： | EM48AM3244VBA-7FE |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 256Mb (2Mⅴ4Bankⅴ32) Synchronous DRAM |
| 中文描述： | 256Mb的（200萬ⅴ4Bankⅴ32）同步DRAM |
| 文件頁數(shù)： | 11/17頁 |
| 文件大?。?/td> | 208K |
| 代理商： | EM48AM3244VBA-7FE |
eorex
EM488M3244VBA
Jul. 2006
www.eorex.com
11/17
Burst Type (A3)
Burst Length
A2
A1
A0
Sequential Addressing
Interleave Addressing
X
X
X
X
X
X
0
0
0
0
1
1
1
1
n
X
X
0
0
1
1
0
0
1
1
0
0
1
1
n
0
0
0
1
0
1
0
1
0
1
0
1
0
1
n
0 1
1 0
0 1 2 3
1 2 3 0
2 3 0 1
3 0 1 2
0 1 2 3 4 5 6 7
1 2 3 4 5 6 7 0
2 3 4 5 6 7 0 1
3 4 5 6 7 0 1 2
4 5 6 7 0 1 2 3
5 6 7 0 1 2 3 4
6 7 0 1 2 3 4 5
7 0 1 2 3 4 5 6
Cn Cn+1 Cn+2
……
0 1
1 0
0 1 2 3
1 0 3 2
2 3 0 1
3 2 1 0
0 1 2 3 4 5 6 7
1 0 3 2 5 4 7 6
2 3 0 1 6 7 4 5
3 2 1 0 7 6 5 4
4 5 6 7 0 1 2 3
5 4 7 6 1 0 3 2
6 7 4 5 2 3 0 1
7 6 5 4 3 2 1 0
2
4
8
Full Page*
-
* Page length is a function of I/O organization and column addressing
×
32 (CA0 ~ CA8):
Full page = 512bits
1. Command Truth Table
CKE
n-1 n
H
H
H
H
H
H
H
H
H
H
H
Command
Symbol
/CS /RAS /CAS /WE
BA0,
BA1
X
X
X
V
V
V
V
V
V
X
L
A10
A11,
A9~A10
X
X
X
V
V
V
V
V
X
X
V
Ignore Command
No Operation
Burst Stop
Read
Read with Auto Pre-charge READA
Write
Write with Auto Pre-charge
Bank Activate
Pre-charge Select Bank
Pre-charge All Banks
Mode Register Set
H = High level, L = Low level, X = High or Low level (Don't care), V = Valid data input
DESL
NOP
BSTH
READ
X
X
X
X
X
X
X
X
X
X
X
H
L
L
L
L
L
L
L
L
L
L
X
H
H
H
H
H
L
L
L
L
L
X
H
H
L
L
L
H
H
H
H
L
X
H
L
H
H
L
H
H
L
L
L
X
X
X
L
H
L
H
V
L
H
L
WRIT
WRITA
ACT
PRE
PALL
MRS
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| EM48AM3244VBA-8FE | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:256Mb (2M′4Bank′32) Synchronous DRAM |
| EM48AM3244VBB-75FE | 制造商:EOREX 制造商全稱:EOREX 功能描述:256Mb (2M】4Bank】32) Synchronous DRAM |
| EM48AM3244VBB-7FE | 制造商:EOREX 制造商全稱:EOREX 功能描述:256Mb (2M】4Bank】32) Synchronous DRAM |
| EM48AM3244VBB-8FE | 制造商:EOREX 制造商全稱:EOREX 功能描述:256Mb (2M】4Bank】32) Synchronous DRAM |
| EM48AM3244VBC-75FE | 制造商:EOREX 制造商全稱:EOREX 功能描述:256Mb (2M】4Bank】32) Synchronous DRAM |
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