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參數(shù)資料
| 型號： | EL2227CS |
| 英文描述： | Dual Very Low Noise Amplifier |
| 中文描述： | 雙極低噪聲放大器 |
| 文件頁數(shù)： | 6/15頁 |
| 文件大?。?/td> | 182K |
| 代理商： | EL2227CS |
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EL2227C
Dual Very Low Noise Amplifier
E
L
2
7
C
bandwidth product divided by the noise gain of the cir-
cuit. For gains less than 2, higher-order poles in the
amplifiers' transfer function contribute to even higher
closed loop bandwidths. For example, the EL2227C
have a -3dB bandwidth of 115MHz at a gain of +2, drop-
ping to 28MHz at a gain of +5. It is important to note
that the EL2227C have been designed so that this
“extra” bandwidth in low-gain applications does not
come at the expense of stability. As seen in the typical
performance curves, the EL2227C in a gain of +2 only
exhibit 0.5dB of peaking with a 1000
load.
Output Drive Capability
The EL2227C have been designed to drive low imped-
ance loads. They can easily drive 6VPP into a 500 load.
This high output drive capability makes the EL2227C an
ideal choice for RF, IF and video applications.
Printed-Circuit Layout
The EL2227C are well behaved, and easy to apply in
most applications. However, a few simple techniques
will help assure rapid, high quality results. As with any
high-frequency device, good PCB layout is necessary
for optimum performance. Ground-plane construction is
highly recommended, as is good power supply bypass-
ing. A 0.1F ceramic capacitor is recommended for
bypassing both supplies. Lead lengths should be as short
as possible, and bypass capacitors should be as close to
the device pins as possible. For good AC performance,
parasitic capacitances should be kept to a minimum at
both inputs and at the output. Resistor values should be
kept under 5k
because of the RC time constants associ-
ated with the parasitic capacitance. Metal-film and
carbon resistors are both acceptable, use of wire-wound
resistors is not recommended because of their parasitic
inductance. Similarly, capacitors should be low-induc-
tance for best performance.
相關(guān)PDF資料 |
PDF描述 |
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| EL2227CS-T13 | SUR ABSORB ZNR VF 27V 125A SMD |
| EL2227CS-T7 | SUR ABSORB ZNR VF 33V 125A SMD |
| EL2227CY | SUR ABSORB ZNR VF 390V 300A SMD |
| EL2228CS-T13 | Dual Low Noise Amplifier |
| EL2228C | Dual Low Noise Amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EL2227CS-T13 | 功能描述:IC AMP DUAL LOW NOISE 8-SOIC RoHS:否 類別:集成電路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 放大器類型:通用 電路數(shù):4 輸出類型:滿擺幅 轉(zhuǎn)換速率:0.6 V/µs 增益帶寬積:1MHz -3db帶寬:- 電流 - 輸入偏壓:2pA 電壓 - 輸入偏移:1000µV 電流 - 電源:85µA 電流 - 輸出 / 通道:20mA 電壓 - 電源，單路/雙路(±):1.8 V ~ 6 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:14-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:14-SOICN 包裝:剪切帶 (CT) 產(chǎn)品目錄頁面:680 (CN2011-ZH PDF) 其它名稱:MCP6L04T-E/SLCT |
| EL2227CS-T7 | 功能描述:IC AMP DUAL LOW NOISE 8-SOIC RoHS:否 類別:集成電路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 放大器類型:通用 電路數(shù):4 輸出類型:滿擺幅 轉(zhuǎn)換速率:0.6 V/µs 增益帶寬積:1MHz -3db帶寬:- 電流 - 輸入偏壓:2pA 電壓 - 輸入偏移:1000µV 電流 - 電源:85µA 電流 - 輸出 / 通道:20mA 電壓 - 電源，單路/雙路(±):1.8 V ~ 6 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:14-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:14-SOICN 包裝:剪切帶 (CT) 產(chǎn)品目錄頁面:680 (CN2011-ZH PDF) 其它名稱:MCP6L04T-E/SLCT |
| EL2227CSZ | 功能描述:高速運算放大器 EL2227CSZ VERY LW NOISE DL AMP RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 電壓增益 dB:116 dB 輸入補(bǔ)償電壓:0.5 mV 轉(zhuǎn)換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| EL2227CSZ-T13 | 功能描述:高速運算放大器 EL2227CSZ VERY LW NOISE DL AMP RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 電壓增益 dB:116 dB 輸入補(bǔ)償電壓:0.5 mV 轉(zhuǎn)換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| EL2227CSZ-T7 | 功能描述:高速運算放大器 EL2227CSZ VERY LW NOISE DL AMP RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 電壓增益 dB:116 dB 輸入補(bǔ)償電壓:0.5 mV 轉(zhuǎn)換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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