參數(shù)資料
型號: EL2211C
英文描述: Low Cost, Dual,Video Op Amps(低價雙路視頻運算放大器)
中文描述: 低成本,雙路,視頻運算放大器(低價雙路視頻運算放大器)
文件頁數(shù): 10/12頁
文件大小: 198K
代理商: EL2211C
EL2210C11CEL2310C11CEL2410C11C
Low Cost Dual Triple and Quad Video Op Amps
Application Information
Product Description
The EL2210 EL2310 and EL2410 are dual triple
and quad operational amplifiers stable at a gain
of 1 The EL2211 EL2311 and the EL2411 are
dual triple and quad operational amplifiers sta-
ble at a gain of 2 All six are built on Elantec’s
proprietary complimentary process and share the
same voltage mode feedback topology This to-
pology allows them to be used in a variety of ap-
plications where current mode feedback amplifi-
ers are not appropriate because of restrictions
placed on the feedback elements These products
are especially designed for applications where
high bandwidth and good video performance
characteristics are desired but the higher cost of
more flexible and sophisticated products are pro-
hibitive
Power Supplies
These amplifiers are designed to work at a supply
voltage difference of 10V to 12V These amplifers
will work on any combination of g supplies All
Electrical characteristics are measured with g5V
supplies Below 9V total supply voltage the am-
plifiers’ performance will degrade dramatically
The quiescent current is a direct function of total
supply voltage With a total supply voltage of
12V the quiescent supply current will increase
from a typical 68 mA per amplifier to 85 mA per
amplifer
Output Swing vs Load
Please refer to the simplified block diagram
These amplifiers provide an NPN pull-up tran-
sistor output and a passive 1250
X pull-down re-
sistor to the most negative supply In an applica-
tion where the load is connected to VSb the out-
put voltage can swing to within 200 mV of VSb
In split supply applications where the DC load is
connected to ground the negative swing is limit-
ed by the voltage divider formed by the load the
internal 1250
X resistor and any external pull-
down resistor If RL were 150X then it and the
1250
X internal resistor limit the maximum nega-
tive swing to (VEE(1501250a150)) or b053V
The negative swing can be increased by adding
an external resistor of appropriate value from the
output to the negative supply The simplified
block diagram shows an 820
X external pull-down
resistor This resistor is in parallel with the inter-
nal 1250
X resistor This will increase the negative
swing to VEE (150((1250
820(1250 a 820) a
150) or b116V
Power Dissipation and Loading
Without any load and a 10V supply difference
the power dissipation is 70 mW per amplifier At
12V supply difference this increases to 105 mW
per amplifier At 12V this translates to a junction
temperature rise above ambient of 33
for the
dual and 40 for the quad amplifier When the
amplifiers provide load current the power dissi-
pation can rapidly rise
In g5V operation each output can drive a
grounded 150
X load to more than 2V This oper-
ating condition will not exceed the maximum
junction temperature limit as long as the ambient
temperature is below 85 C the device is soldered
in place and the extra pull-down resistor is 820
X
or more
If the load is connected to the most negative volt-
age (ground in single supply operation) you can
easily exceed the absolute maximum die tempera-
ture For example the maximum die temperature
should be 150 C At a maximum expected ambi-
ent temperature of 85 C the total allowable pow-
er dissipation for the SO-8 package would be
PD e (150 b 75)180 CW e 416 mW
At 12V total supply voltage each amplifier draws
a maximum of 85 mA and dissipates 12V
85 mA e 100 mW or 200 mW for the dual ampli-
fier Which leaves 216 mW of increased power
due to the load If the load were 150
X connected
to the most negative voltage and the maximum
voltage out were VSba2V the load current
would be 13 mA Then an extra 266 mW ((12V b
2V)
133 mA
2) would be dissipated in the
EL2210 or EL2211 The total dual amplifier pow-
er dissipation would be 266 mW a 200 mW e
466 mW more than the maximum 416 mW al-
lowed If the total supply difference were reduced
to
10V
the
same
calculations
would
yield
170 mW quiescent power dissipation and 213 mW
due to loading This results in a die temperature
of 143 C (75 C a 69 C)
7
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