參數(shù)資料
型號(hào)： EDI9LC644V
英文描述： 128Kx32 SSRAM/1Mx32 SDRAM Array(3.3V,128x32同步靜態(tài)RAM和1Mx32同步動(dòng)態(tài)RAM陣列)
中文描述： 128Kx32 SSRAM/1Mx32內(nèi)存陣列（3.3伏，128x32同步靜態(tài)內(nèi)存和1Mx32同步動(dòng)態(tài)內(nèi)存陣列）
文件頁(yè)數(shù)： 10/26頁(yè)
文件大?。?/td> 460K
代理商： EDI9LC644V
18
White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
EDI9LC644V
EDI9LC644AV
FIG. 10 SDRAM PAGE WRITE CYCLE AT DIFFERENT BANK @ BURST LENGTH = 4
CAc
CBd
RBb
CAa
RAa
Write
(A-Bank)
Write
(B-Bank)
Row Active
(B-Bank)
Write
(B-Bank)
Precharge
(Both Banks)
Write
(A-Bank)
Row Active
(A-Bank)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
RAa
DAa3
DBb0
DBb1
DBb2
DBb3
DAc0
DAc1
DBd0
DBd1
DAa1
DAa0
DAa2
DON'T CARE
CBb
Note 2
Note 1
RBb
tRDL
tCDL
SDRAS
SDCAS
ADDR
A11 (BA)
BWE
SDA10
SDCLK
SDCE
DQ
SDWE
NOTES:
1. To interrupt burst write by Row precharge, BWE should be asserted to mask invalid input data.
2. To interrupt a burst read by Row precharge, both the read and the precharge banks must be the same.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EDI9LC644V1310BC 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128Kx32 SSRAM/1Mx32 SDRAM
EDI9LC644V1312BC 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128Kx32 SSRAM/1Mx32 SDRAM
EDI9LC644V1510BC 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128Kx32 SSRAM/1Mx32 SDRAM
EDI9LC644V1512BC 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128Kx32 SSRAM/1Mx32 SDRAM
EDI9LC644V1610BC 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128Kx32 SSRAM/1Mx32 SDRAM
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