參數(shù)資料
型號(hào)： EBD52UC8AKFA-5B-E
廠商： ELPIDA MEMORY INC
元件分類(lèi)： DRAM
英文描述： JT 26C 26#20 SKT GRND PLUG
中文描述： 64M X 64 DDR DRAM MODULE, 0.7 ns, DMA184
封裝： LEAD FREE, DIMM-184
文件頁(yè)數(shù)： 11/19頁(yè)
文件大?。?/td> 190K
代理商： EBD52UC8AKFA-5B-E
EBD52UC8AKFA-5-E
Preliminary Data Sheet E0601E10 (Ver. 1.0)
11
DC Characteristics 1 (TA = 0 to +70°C, VDD = 2.6V ± 0.1V, VSS = 0V)
Parameter
Symbol
Grade
max.
Unit
Test condition
Notes
Operating current (ACTV-PRE)
IDD0
-5B
-5C
1360
1280
mA
CKE
≥
VIH,
tRC = tRC (min.)
CKE
≥
VIH, BL = 4,
CL = 3,
tRC = tRC (min.)
1, 2, 9
Operating current
(ACTV-READ-PRE)
IDD1
-5B
-5C
1600
1520
mA
1, 2, 5
Idle power down standby current
IDD2P
48
mA
CKE
≤
VIL
4
Floating idle
Standby current
Quiet idle
Standby current
Active power down
standby current
IDD2F
480
mA
≥
VIH, /CS
≥
VIH
CKE
≥
VIH, /CS
≥
VIH
CKE
IDD2Q
400
mA
IDD3P
320
mA
CKE
≤
VIL
3
Active standby current
IDD3N
960
mA
CKE
≥
VIH, /CS
≥
VIH
tRAS = tRAS (max.)
CKE
≥
VIH, BL = 2,
CL = 3
CKE
≥
VIH, BL = 2,
CL = 3
tRFC = tRFC (min.),
Input
≤
VIL or
≥
VIH
Input
≥
VDD – 0.2 V
Input
≤
0.2 V
3, 5, 6
Operating current
(Burst read operation)
Operating current
(Burst write operation)
IDD4R
2080
mA
1, 2, 5, 6
IDD4W
2160
mA
1, 2, 5, 6
Auto refresh current
IDD5
2720
mA
Self refresh current
IDD6
48
mA
Operating current
(4 banks interleaving)
Notes. 1. These IDD data are measured under condition that DQ pins are not connected.
2. One bank operation.
3. One bank active.
4. All banks idle.
5. Command/Address transition once per one cycle.
6. DQ, DM and DQS transition twice per one cycle.
7. 4 banks active. Only one bank is running at tRC = tRC (min.)
8. The IDD data on this table are measured with regard to tCK = tCK (min.) in general.
9. Command/Address transition once per one every two clock cycles.
10. Command/Address stable at
≥
VIH or
≤
VIL.
IDD7A
3040
mA
BL = 4
1, 5, 6, 7
DC Characteristics 2 (TA = 0 to +70°C, VDD, VDDQ = 2.6V ± 0.1V, VSS = 0V)
Parameter
Symbol
min.
max.
Unit
Test condition
Note
Input leakage current
ILI
–32
32
μA
VDD
≥
VIN
≥
VSS
Output leakage current
ILO
–10
10
μA
VDD
≥
VOUT
≥
VSS
Output high current
IOH
–15.2
—
mA
VOUT = 1.95V
1
Output low current
IOL
15.2
—
mA
VOUT = 0.35V
1
Note: 1. DDR SDRAM component specification.
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EBD52UC8AKFA-5C 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered DDR SDRAM DIMM (64M words x 64 bits, 2 Ranks)
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EBD52UC8AKFA-5-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512MB Unbuffered DDR SDRAM DIMM (64M words x 64 bits, 2 Ranks)
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