參數(shù)資料
型號(hào): EBD25RB4ALFB-1A
英文描述: SDRAM|DDR|32MX72|CMOS|DIMM|184PIN|PLASTIC
中文描述: 內(nèi)存|復(fù)員| 32MX72 |的CMOS |內(nèi)存| 184PIN |塑料
文件頁(yè)數(shù): 13/17頁(yè)
文件大?。?/td> 158K
代理商: EBD25RB4ALFB-1A
EBD25RB4ALFB
Data Sheet . E0236E10 (Ver. 1.0)
5
Serial PD Matrix
Byte No.
Function described
Bit7
Bit6
Bit5
Bit4
Bit3
Bit2
Bit1
Bit0
Hex value
Comments
0
Number of bytes utilized by module
manufacturer
1
0
80H
128 bytes
1
Total number of bytes in serial PD
device
0
1
0
08H
256 bytes
2
Memory type
0
1
07H
DDR SDRAM
3
Number of row address
0
1
0
0CH
12
4
Number of column address
0
1
0
1
0BH
11
5
Number of DIMM banks
0
1
01H
1
6
Module data width
0
1
0
1
0
48H
72 bits
7
Module data width continuation
0
00H
0
8
Voltage interface level of this assembly 0
0
1
0
04H
SSTL 2
9
DDR SDRAM cycle time, CL = 2.5
(-7A)
0
1
0
1
0
1
75H
7.5ns
(-75)
0
1
0
1
0
1
75H
7.5ns
(-1A)
1
0
1
0
A0H
10ns
10
SDRAM access from clock (tAC)
(-7A)
0
1
0
1
0
1
75H
0.75ns
(-75)
0
1
0
1
0
1
75H
0.75ns
(-1A)
1
0
80H
0.8ns
11
DIMM configuration type
0
1
0
02H
ECC
12
Refresh rate/type
1
0
80H
Norm
13
Primary SDRAM width
0
1
0
04H
× 4
14
Error checking SDRAM width
0
1
0
04H
× 4
15
SDRAM device attributes:
Minimum clock delay back-to-back
column access
0
1
01H
1 CLK
16
SDRAM device attributes:
Burst length supported
0
1
0
0EH
2, 4, 8
17
SDRAM device attributes: Number of
banks on SDRAM device
0
1
0
04H
4
18
SDRAM device attributes:
/CAS latency
0
1
0
0CH
2, 2.5
19
SDRAM device attributes:
/CS latency
0
1
01H
0
20
SDRAM device attributes:
/WE latency
0
1
0
02H
1
21
SDRAM module attributes
0
1
0
1
0
26H
Reg+PLLdifclk
22
SDRAM device attributes: General
0
00H
VDD± 0.2V
23
Minimum clock cycle time at CL = 2
(-7A)
0
1
0
1
0
1
75H
7.5ns
(-75)
1
0
1
0
A0H
10ns
(-1A)
1
0
1
0
A0H
10ns
24
Maximum data access time (tAC) from
clock at CL = 2
(-7A)
0
1
0
1
0
1
75H
0.75ns
(-75)
0
1
0
1
0
1
75H
0.75ns
(-1A)
1
0
80H
0.8ns
25 to 26
0
00H
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