參數(shù)資料
型號: E28F002BL-T150
廠商: INTEL CORP
元件分類: PROM
英文描述: 2-MBIT (128K x 16, 256K x 8)LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY
中文描述: 256K X 8 FLASH 12V PROM, 150 ns, PDSO40
封裝: 20 X 10 MM, TSOP-40
文件頁數(shù): 32/37頁
文件大?。?/td> 455K
代理商: E28F002BL-T150
28F002BC 2-MBIT BOOT BLOCK FLASH MEMORY
E
32
PRELIMINARY
ADDRESSES (A)
CE# (E)
OE# (G)
WE# (W)
DATA (D/Q)
RP# (P)
IH
V
IL
V
V
IH
IL
V
V
IH
IL
V
IH
V
IL
V
HH
V
V
6.5V
IL
V
IL
V
IN
D
IN
A
IN
A
AVAV
t
AVWH
t
WHAX
t
IN
D
WHEH
t
WHWL
t
Valid
SRD
IN
D
WHQV1,2,3,4
t
VPWH
t
QVVL
t
QVPH
t
PHHWH
t
IH
PHWL
t
High Z
WHDX
t
DVWH
t
WLWH
t
V
IL
V
V (V)
1
2
3
4
6
5
PPH
V
V
PPLK
V
PPH
1
2
WP#
IL
V
IH
V
ELWL
t
0578_12
NOTES:
1.
2.
3.
4.
5.
6.
V
CC
Power-Up and Standby
Write Program Setup or Erase Setup Command
Write Valid Address and Data (Program or Erase Confirm Command
Automated Program or Erase Delay
Read Status Register Data
Write Read Array Command
Figure 13. AC Waveforms for Write and Erase Operations (WE#
—Controlled Writes)
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