半導(dǎo)體模塊 APTM100H80FT1G品牌、價(jià)格、PDF參數(shù)
APTM100H80FT1G • 品牌、價(jià)格
| 元器件型號 |
廠商 |
描述 |
數(shù)量 |
價(jià)格 |
| APTM100H80FT1G |
Microsemi Power Products Group |
MOSFET MODULE FULL BRIDGE SP1 |
0 |
15:$58.07533
|
| APTM10DSKM19T3G |
Microsemi Power Products Group |
MOSFET MOD DUAL BUCK CHOPPER SP3 |
0 |
17:$50.16529
|
| APTC60SKM35T1G |
Microsemi Power Products Group |
MOSFET N-CH 600V 72A SP1 |
0 |
19:$48.94947
|
| APTM100SK40T1G |
Microsemi Power Products Group |
MOSFET N-CH 1000V 20A SP1 |
0 |
22:$41.94909
|
| APTC80SK15T1G |
Microsemi Power Products Group |
MOSFET N-CH 800V 28A SP1 |
0 |
24:$37.38292
|
| APTC80DA15T1G |
Microsemi Power Products Group |
MOSFET N-CH 800V 28A SP1 |
0 |
24:$37.38292
|
APTM100H80FT1G • PDF參數(shù)
| 類別: |
半導(dǎo)體模塊
|
| FET 型: |
4 N 通道（半橋）
|
| FET 特點(diǎn): |
標(biāo)準(zhǔn)
|
| 漏極至源極電壓(Vdss): |
1000V（1kV）
|
| 電流 - 連續(xù)漏極(Id) @ 25° C: |
11A
|
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: |
960 毫歐 @ 9A，10V
|
| Id 時(shí)的 Vgs(th)（最大）: |
5V @ 1mA
|
| 閘電荷(Qg) @ Vgs: |
150nC @ 10V
|
| 輸入電容 (Ciss) @ Vds: |
3876pF @ 25V
|
| 功率 - 最大: |
208W
|
| 安裝類型: |
底座安裝
|
| 封裝/外殼: |
SP1
|
| 供應(yīng)商設(shè)備封裝: |
SP1
|
| 包裝: |
散裝
|