分離式半導體產(chǎn)品 DMN65D8LFB-7B品牌、價格、PDF參數(shù)

DMN65D8LFB-7B • 品牌、價格
元器件型號 廠商 描述 數(shù)量 價格
DMN65D8LFB-7B Diodes Inc MOSF N CH 60V 260MA X1-DFN1006-3 19,897 1:$0.49000
10:$0.34500
25:$0.28360
100:$0.22650
250:$0.16500
500:$0.13400
1,000:$0.10300
2,500:$0.09250
5,000:$0.08750
DMN65D8LFB-7B Diodes Inc MOSF N CH 60V 260MA X1-DFN1006-3 10,000 10,000:$0.07750
30,000:$0.07250
50,000:$0.06500
100,000:$0.06400
250,000:$0.06250
DMN62D0LFB-7B Diodes Inc MOSFET N-CH 60V 100MA 3-DFN 13,864 1:$0.49000
10:$0.34500
25:$0.28360
100:$0.22650
250:$0.16500
500:$0.13400
1,000:$0.10300
2,500:$0.09250
5,000:$0.08750
DMN65D8LFB-7B • PDF參數(shù)
類別: 分離式半導體產(chǎn)品
FET 型: MOSFET N 通道,金屬氧化物
FET 特點: 邏輯電平門
漏極至源極電壓(Vdss): 60V
電流 - 連續(xù)漏極(Id) @ 25° C: 260mA
開態(tài)Rds(最大)@ Id, Vgs @ 25° C: 3 歐姆 @ 115mA,10V
Id 時的 Vgs(th)(最大): 2V @ 250µA
閘電荷(Qg) @ Vgs: -
輸入電容 (Ciss) @ Vds: 25pF @ 25V
功率 - 最大: 430mW
安裝類型: 表面貼裝
封裝/外殼: 3-XFDFN
供應商設備封裝: 3-X1DFN1006
包裝: 剪切帶 (CT)