元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
---|---|---|---|---|
PMV117EN,215 | NXP Semiconductors | MOSFET N-CH 30V 2.5A SOT23 | 6,000 | 3,000:$0.13000 6,000:$0.12200 15,000:$0.11400 30,000:$0.10400 75,000:$0.10000 150,000:$0.09700 |
SI2302DS,215 | NXP Semiconductors | MOSFET N-CH 20V 2.5A SOT23 | 11,613 | 1:$0.53000 10:$0.41200 25:$0.34760 100:$0.28340 250:$0.23472 500:$0.19390 1,000:$0.14523 |
SI2302DS,215 | NXP Semiconductors | MOSFET N-CH 20V 2.5A SOT23 | 9,000 | 3,000:$0.13000 6,000:$0.12200 15,000:$0.11400 30,000:$0.10400 75,000:$0.10000 150,000:$0.09700 |
SI2304DS,215 | NXP Semiconductors | MOSFET N-CH 30V 1.7A SOT23 | 7,822 | 1:$0.53000 10:$0.41200 25:$0.34760 100:$0.28340 250:$0.23472 500:$0.19390 1,000:$0.14523 |
SI2304DS,215 | NXP Semiconductors | MOSFET N-CH 30V 1.7A SOT23 | 7,822 | 1:$0.53000 10:$0.41200 25:$0.34760 100:$0.28340 250:$0.23472 500:$0.19390 1,000:$0.14523 |
SI2304DS,215 | NXP Semiconductors | MOSFET N-CH 30V 1.7A SOT23 | 6,000 | 3,000:$0.13000 6,000:$0.12200 15,000:$0.11400 30,000:$0.10400 75,000:$0.10000 150,000:$0.09700 |
類別: | 分離式半導(dǎo)體產(chǎn)品 |
---|---|
FET 型: | MOSFET N 通道,金屬氧化物 |
FET 特點(diǎn): | 邏輯電平門 |
漏極至源極電壓(Vdss): | 30V |
電流 - 連續(xù)漏極(Id) @ 25° C: | 2.5A |
開態(tài)Rds(最大)@ Id, Vgs @ 25° C: | 117 毫歐 @ 500mA,10V |
Id 時(shí)的 Vgs(th)(最大): | 2V @ 1mA |
閘電荷(Qg) @ Vgs: | 4.6nC @ 10V |
輸入電容 (Ciss) @ Vds: | 147pF @ 10V |
功率 - 最大: | 830mW |
安裝類型: | 表面貼裝 |
封裝/外殼: | TO-236-3,SC-59,SOT-23-3 |
供應(yīng)商設(shè)備封裝: | TO-236AB |
包裝: | 帶卷 (TR) |