分離式半導(dǎo)體產(chǎn)品 PMK35EP,518品牌、價格、PDF參數(shù)

PMK35EP,518 • 品牌、價格
元器件型號 廠商 描述 數(shù)量 價格
PMK35EP,518 NXP Semiconductors MOSFET P-CH FET 30V 14.9A 8-SOIC 0 2,500:$0.45024
5,000:$0.42773
12,500:$0.41165
25,000:$0.39878
62,500:$0.38592
BUK9675-55A,118 NXP Semiconductors MOSFET N-CH 55V 20A D2PAK 0 800:$0.45019
1,600:$0.40680
2,400:$0.37968
5,600:$0.36070
20,000:$0.34714
40,000:$0.33629
80,000:$0.32544
BUK96180-100A,118 NXP Semiconductors MOSFET N-CH 100V 11A D2PAK 0 800:$0.45019
1,600:$0.40680
2,400:$0.37968
5,600:$0.36070
20,000:$0.34714
40,000:$0.33629
80,000:$0.32544
BUK7675-55A,118 NXP Semiconductors MOSFET N-CH 55V 20.3A D2PAK 0 1:$0.98000
10:$0.86500
25:$0.78120
100:$0.68340
250:$0.59936
PMK35EP,518 • PDF參數(shù)
類別: 分離式半導(dǎo)體產(chǎn)品
FET 型: MOSFET P 通道，金屬氧化物
FET 特點: 邏輯電平門
漏極至源極電壓(Vdss): 30V
電流 - 連續(xù)漏極(Id) @ 25° C: 14.9A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C: 19 毫歐 @ 9.2A，10V
Id 時的 Vgs(th)（最大）: 3V @ 250µA
閘電荷(Qg) @ Vgs: 42nC @ 10V
輸入電容 (Ciss) @ Vds: 2100pF @ 25V
功率 - 最大: 6.9W
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC（0.154"，3.90mm 寬）
供應(yīng)商設(shè)備封裝: 8-SO
包裝: 帶卷 (TR)