| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
|---|---|---|---|---|
| STB26NM60N | STMicroelectronics | MOSFET N-CH 600V 20A D2PAK | 1,329 | 1:$6.65000 10:$5.96000 25:$5.35920 100:$4.87410 250:$4.41212 500:$3.95010 |
| STH180N10F3-6 | STMicroelectronics | MOSFET N-CH 100V 180A H2PAK | 975 | 1:$5.39000 10:$4.82500 25:$4.33840 100:$3.94570 250:$3.57172 500:$3.19770 |
| STH180N10F3-6 | STMicroelectronics | MOSFET N-CH 100V 180A H2PAK | 0 | 1,000:$2.61800 2,000:$2.48710 5,000:$2.39360 10,000:$2.31880 25,000:$2.24400 |
| STL85N6F3 | STMicroelectronics | MOSFET N-CH 60V 85A POWERFLAT5X6 | 695 | 1:$3.33000 10:$2.98000 25:$2.67960 100:$2.43710 250:$2.20604 500:$1.97506 1,000:$1.66320 |
| STL85N6F3 | STMicroelectronics | MOSFET N-CH 60V 85A POWERFLAT5X6 | 695 | 1:$3.33000 10:$2.98000 25:$2.67960 100:$2.43710 250:$2.20604 500:$1.97506 1,000:$1.66320 |
| STL85N6F3 | STMicroelectronics | MOSFET N-CH 60V 85A POWERFLAT5X6 | 0 | 3,000:$1.53600 6,000:$1.47800 15,000:$1.43200 30,000:$1.38600 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 標(biāo)準(zhǔn) |
| 漏極至源極電壓(Vdss): | 600V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 20A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 165 毫歐 @ 10A，10V |
| Id 時的 Vgs(th)（最大）: | 4V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 60nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 1800pF @ 50V |
| 功率 - 最大: | 140W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-263-3，D²Pak（2 引線+接片），TO-263AB |
| 供應(yīng)商設(shè)備封裝: | D2PAK |
| 包裝: | 剪切帶 (CT) |