| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
|---|---|---|---|---|
| BSC0901NSI | Infineon Technologies | MOSFET N-CH 30V 28A 8TDSON | 10,000 | 1:$2.25000 10:$1.93300 25:$1.73920 100:$1.57830 250:$1.41724 500:$1.22398 1,000:$1.03072 2,500:$0.93409 |
| BSS215P H6327 | Infineon Technologies | MOSFET P-CH 20V 1.5A SOT23 | 6,220 | 1:$0.45000 10:$0.35700 25:$0.29720 100:$0.24410 250:$0.20344 500:$0.16902 1,000:$0.12520 |
| BSS215P H6327 | Infineon Technologies | MOSFET P-CH 20V 1.5A SOT23 | 6,000 | 3,000:$0.10329 6,000:$0.09703 15,000:$0.09077 30,000:$0.08326 75,000:$0.07982 150,000:$0.07669 |
| BSD816SN L6327 | Infineon Technologies | MOSFET N-CH 20V 1.4A SOT363 | 5,953 | 1:$0.54000 10:$0.38300 25:$0.30240 100:$0.22980 250:$0.16276 500:$0.13022 1,000:$0.09958 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 30V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 100A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 2 毫歐 @ 30A，10V |
| Id 時的 Vgs(th)（最大）: | 2.2V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 20nC @ 15V |
| 輸入電容 (Ciss) @ Vds: | 2600pF @ 15V |
| 功率 - 最大: | 69W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 8-PowerTDFN |
| 供應(yīng)商設(shè)備封裝: | PG-TDSON-8 |
| 包裝: | Digi-Reel® |