| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
|---|---|---|---|---|
| IPD65R600E6 | Infineon Technologies | MOSFET N-CH 650V 7.3A TO252-3 | 4,881 | 1:$2.22000 10:$1.90700 25:$1.71600 100:$1.55700 250:$1.39812 500:$1.20746 1,000:$1.01680 |
| BSS308PE H6327 | Infineon Technologies | MOSFET P-CH 30V 2.0A SOT23 | 11,815 | 1:$0.60000 10:$0.42200 25:$0.34920 100:$0.28150 250:$0.20268 500:$0.16328 1,000:$0.12668 |
| BSS308PE H6327 | Infineon Technologies | MOSFET P-CH 30V 2.0A SOT23 | 9,000 | 3,000:$0.10134 6,000:$0.09571 15,000:$0.08727 30,000:$0.08164 75,000:$0.07319 150,000:$0.07038 |
| BSZ900N20NS3 G | Infineon Technologies | MOSFET N-CH 200V 15.2A 8TSDSON | 9,672 | 1:$2.28000 10:$1.95800 25:$1.76240 100:$1.59910 250:$1.43596 500:$1.24014 1,000:$1.04432 2,500:$0.94642 |
| 類別: | 分離式半導體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 標準 |
| 漏極至源極電壓(Vdss): | 650V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 7.3A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 600 毫歐 @ 2.1A，10V |
| Id 時的 Vgs(th)（最大）: | 3.5V @ 210µA |
| 閘電荷(Qg) @ Vgs: | 23nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 440pF @ 100V |
| 功率 - 最大: | 63W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-252-3，DPak（2 引線+接片），SC-63 |
| 供應商設備封裝: | PG-TO252-3 |
| 包裝: | Digi-Reel® |