| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
|---|---|---|---|---|
| BSZ16DN25NS3 G | Infineon Technologies | MOSFET N-CH 250V 10.9A 8TSDSON | 8,796 | 1:$2.43000 10:$2.08100 25:$1.87240 100:$1.69910 250:$1.52572 500:$1.31766 1,000:$1.10960 2,500:$1.00558 |
| IPD110N12N3 G | Infineon Technologies | MOSFET N-CH 120V 75A TO252-3 | 3,486 | 1:$2.33000 10:$1.99300 25:$1.79360 100:$1.62750 250:$1.46148 500:$1.26218 1,000:$1.06288 |
| IPD110N12N3 G | Infineon Technologies | MOSFET N-CH 120V 75A TO252-3 | 3,486 | 1:$2.33000 10:$1.99300 25:$1.79360 100:$1.62750 250:$1.46148 500:$1.26218 1,000:$1.06288 |
| BSP125 L6433 | Infineon Technologies | MOSFET N-CH 600V 120MA SOT-223 | 11,060 | 1:$1.09000 10:$0.97800 25:$0.86320 100:$0.77680 250:$0.67608 500:$0.60418 1,000:$0.47471 |
| BSP125 L6433 | Infineon Technologies | MOSFET N-CH 600V 120MA SOT-223 | 8,000 | 4,000:$0.40278 8,000:$0.38264 12,000:$0.36682 28,000:$0.35675 100,000:$0.34524 |
| 類別: | 分離式半導體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 250V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 10.9A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 165 毫歐 @ 5.5A，10V |
| Id 時的 Vgs(th)（最大）: | 4V @ 32µA |
| 閘電荷(Qg) @ Vgs: | 11.4nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 920pF @ 100V |
| 功率 - 最大: | 62.5W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 8-PowerTDFN |
| 供應商設備封裝: | - |
| 包裝: | Digi-Reel® |