| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
|---|---|---|---|---|
| SUD09P10-195-GE3 | Vishay Siliconix | MOSFET P-CH 100V DPAK | 8,000 | 2,000:$0.35000 6,000:$0.33250 10,000:$0.31875 50,000:$0.30000 |
| SI4666DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 25V 8-SOIC | 3,384 | 1:$0.97000 25:$0.74800 100:$0.66000 250:$0.57200 500:$0.48400 1,000:$0.38500 |
| SI4666DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 25V 8-SOIC | 3,384 | 1:$0.97000 25:$0.74800 100:$0.66000 250:$0.57200 500:$0.48400 1,000:$0.38500 |
| SI4666DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 25V 8-SOIC | 2,500 | 2,500:$0.31900 5,000:$0.29700 12,500:$0.28600 25,000:$0.27500 62,500:$0.27060 125,000:$0.26400 |
| SI4401DDY-T1-GE3 | Vishay Siliconix | MOSFET P-CH 40V 8-SOIC | 15,157 | 1:$0.97000 25:$0.74800 100:$0.66000 250:$0.57200 500:$0.48400 1,000:$0.38500 |
| SI4401DDY-T1-GE3 | Vishay Siliconix | MOSFET P-CH 40V 8-SOIC | 15,157 | 1:$0.97000 25:$0.74800 100:$0.66000 250:$0.57200 500:$0.48400 1,000:$0.38500 |
| SI4401DDY-T1-GE3 | Vishay Siliconix | MOSFET P-CH 40V 8-SOIC | 15,000 | 2,500:$0.31900 5,000:$0.29700 12,500:$0.28600 25,000:$0.27500 62,500:$0.27060 125,000:$0.26400 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET P 通道，金屬氧化物 |
| FET 特點: | 標(biāo)準(zhǔn) |
| 漏極至源極電壓(Vdss): | 100V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 8.8A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 195 毫歐 @ 3.6A，10V |
| Id 時的 Vgs(th)（最大）: | 2.5V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 34.8nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 1055pF @ 50V |
| 功率 - 最大: | 2.5W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-252-3，DPak（2 引線+接片），SC-63 |
| 供應(yīng)商設(shè)備封裝: | TO-252，（D-Pak） |
| 包裝: | 帶卷 (TR) |