| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| SI2334DS-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V SOT-23 | 3,000 | 3,000:$0.20925 6,000:$0.19575 15,000:$0.18225 30,000:$0.17213 75,000:$0.16875 150,000:$0.16200 |
| SI5419DU-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 30V PPAK CHIPFET | 7,368 | 1:$0.74000 25:$0.51960 100:$0.44550 250:$0.38476 500:$0.33076 1,000:$0.25650 |
| SI5419DU-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 30V PPAK CHIPFET | 6,000 | 3,000:$0.20925 6,000:$0.19575 15,000:$0.18225 30,000:$0.17213 75,000:$0.16875 150,000:$0.16200 |
| SQ1470EH-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 2.8A SC70 | 5,420 | 1:$0.66000 25:$0.46200 100:$0.39600 250:$0.34200 500:$0.29400 1,000:$0.22800 |
| SQ1470EH-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 2.8A SC70 | 5,420 | 1:$0.66000 25:$0.46200 100:$0.39600 250:$0.34200 500:$0.29400 1,000:$0.22800 |
| SQ1470EH-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 2.8A SC70 | 3,000 | 3,000:$0.18600 6,000:$0.17400 15,000:$0.16200 30,000:$0.15300 75,000:$0.15000 150,000:$0.14400 |
| SIA425EDJ-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V SC-70-6 | 3,000 | 3,000:$0.17050 6,000:$0.15950 15,000:$0.14850 30,000:$0.14025 75,000:$0.13750 150,000:$0.13200 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 30V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 4.9A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 44 毫歐 @ 4.2A，4.5V |
| Id 時(shí)的 Vgs(th)（最大）: | 1V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 10nC @ 4.5V |
| 輸入電容 (Ciss) @ Vds: | 634pF @ 15V |
| 功率 - 最大: | 1.7W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-236-3，SC-59，SOT-23-3 |
| 供應(yīng)商設(shè)備封裝: | SOT-23-3（TO-236） |
| 包裝: | 帶卷 (TR) |