| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
|---|---|---|---|---|
| SI1470DH-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V SC-70-6 | 33 | 1:$0.66000 25:$0.51000 100:$0.45000 250:$0.39000 500:$0.33000 1,000:$0.26250 |
| SI1470DH-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V SC-70-6 | 0 | 3,000:$0.21750 6,000:$0.20250 15,000:$0.19500 30,000:$0.18750 75,000:$0.18450 150,000:$0.18000 |
| SI1406DH-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V SC-70-6 | 529 | 1:$0.66000 25:$0.51000 100:$0.45000 250:$0.39000 500:$0.33000 1,000:$0.26250 |
| SI1406DH-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V SC-70-6 | 529 | 1:$0.66000 25:$0.51000 100:$0.45000 250:$0.39000 500:$0.33000 1,000:$0.26250 |
| SI1406DH-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V SC-70-6 | 0 | 3,000:$0.21750 6,000:$0.20250 15,000:$0.19500 30,000:$0.18750 75,000:$0.18450 150,000:$0.18000 |
| 類別: | 分離式半導體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點: | 標準 |
| 漏極至源極電壓(Vdss): | 30V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 5.1A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 66 毫歐 @ 3.8A，4.5V |
| Id 時的 Vgs(th)（最大）: | 1.6V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 7.5nC @ 5V |
| 輸入電容 (Ciss) @ Vds: | 510pF @ 15V |
| 功率 - 最大: | 2.8W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 6-TSSOP，SC-88，SOT-363 |
| 供應商設(shè)備封裝: | SC-70-6 |
| 包裝: | 剪切帶 (CT) |