| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| PSMN1R3-30YL,115 | NXP Semiconductors | MOSFET N-CH 30V 100A LFPAK | 7,193 | 1:$1.52000 10:$1.34000 25:$1.20960 100:$1.05840 250:$0.92820 500:$0.82320 |
| PSMN1R3-30YL,115 | NXP Semiconductors | MOSFET N-CH 30V 100A LFPAK | 6,000 | 1,500:$0.63000 3,000:$0.58800 7,500:$0.55860 10,500:$0.53760 37,500:$0.52080 75,000:$0.50400 |
| BUK6607-55C,118 | NXP Semiconductors | MOSFET N-CH TRENCH D2PACK | 4,323 | 1:$1.64000 10:$1.47700 25:$1.32320 100:$1.18970 250:$1.05636 |
| BUK664R6-40C,118 | NXP Semiconductors | MOSFET N-CH TRENCH D2PACK | 4,794 | 1:$1.64000 10:$1.47700 25:$1.32320 100:$1.18970 250:$1.05636 |
| BUK664R6-40C,118 | NXP Semiconductors | MOSFET N-CH TRENCH D2PACK | 4,794 | 1:$1.64000 10:$1.47700 25:$1.32320 100:$1.18970 250:$1.05636 |
| BUK663R5-30C,118 | NXP Semiconductors | MOSFET N-CH TRENCH D2PACK | 4,787 | 1:$1.64000 10:$1.47700 25:$1.32320 100:$1.18970 250:$1.05636 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 30V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 100A |
| 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 1.3 毫歐 @ 15A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 2.15V @ 1mA |
| 閘電荷(Qg) @ Vgs: | 100nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 6227pF @ 12V |
| 功率 - 最大: | 121W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | SOT1023，4-LFPAK |
| 供應(yīng)商設(shè)備封裝: | LFPAK，Power-SO8 |
| 包裝: | Digi-Reel® |