分離式半導體產(chǎn)品 RJK0355DPA-01#J0B品牌、價格、PDF參數(shù)

RJK0355DPA-01#J0B • 品牌、價格
元器件型號 廠商 描述 數(shù)量 價格
RJK0355DPA-01#J0B Renesas Electronics America MOSFET N-CH 30V 30A 2WPACK 2,500 2,500:$0.35000
5,000:$0.33250
12,500:$0.31875
25,000:$0.31000
62,500:$0.30000
RJK03B7DPA-00#J5A Renesas Electronics America MOSFET N-CH 30V 30A W-PAK 8,700 1:$0.95000
10:$0.85000
25:$0.75000
100:$0.67500
250:$0.58752
500:$0.52500
1,000:$0.41250
RJK1053DPB-00#J5 Renesas Electronics America MOSFET N-CH 100V 25A LFPAK 4,794 1:$2.28000
10:$1.95000
25:$1.75520
100:$1.59250
250:$1.43000
500:$1.23500
1,000:$1.04000
NP75P03YDG-E1-AY Renesas Electronics America MOSFET P-CH -30V 75A 8HSON 4,899 1:$2.28000
10:$1.95000
25:$1.75520
100:$1.59250
250:$1.43000
500:$1.23500
1,000:$1.04000
RJK0355DPA-01#J0B • PDF參數(shù)
類別: 分離式半導體產(chǎn)品
FET 型: MOSFET N 通道,金屬氧化物
FET 特點: 邏輯電平門
漏極至源極電壓(Vdss): 30V
電流 - 連續(xù)漏極(Id) @ 25° C: 30A
開態(tài)Rds(最大)@ Id, Vgs @ 25° C: 10.7 毫歐 @ 15A,10V
Id 時的 Vgs(th)(最大): -
閘電荷(Qg) @ Vgs: 6.3nC @ 4.5V
輸入電容 (Ciss) @ Vds: 860pF @ 10V
功率 - 最大: 25W
安裝類型: 表面貼裝
封裝/外殼: 8-WDFN 裸露焊盤
供應商設備封裝: 8-WPAK
包裝: 帶卷 (TR)