| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| IXFB110N60P3 | IXYS | MOSFET N-CH 600V 110A PLUS264 | 90 | 1:$18.22000 25:$15.31800 100:$14.07600 250:$12.83400 500:$12.00600 1,000:$11.01240 2,500:$10.55700 5,000:$10.26720 10,000:$9.93600 |
| IXFH44N50Q3 | IXYS | MOSFET N-CH 500V 44A TO-247 | 55 | 1:$14.26000 10:$12.96000 100:$11.01600 250:$10.04400 500:$9.39600 1,000:$8.61840 2,500:$8.26200 5,000:$8.03520 10,000:$7.77600 |
| IXFH16N120P | IXYS | MOSFET N-CH 1200V 16A TO-247 | 102 | 1:$14.26000 10:$12.96000 100:$11.01600 250:$10.04400 500:$9.39600 1,000:$8.61840 2,500:$8.26200 5,000:$8.03520 |
| IXFK160N30T | IXYS | MOSFET N-CH 160A 300V TO-264 | 573 | 1:$13.51000 25:$11.35920 100:$10.43800 250:$9.51700 500:$8.90300 1,000:$8.16620 2,500:$7.82850 5,000:$7.61360 10,000:$7.36800 |
| IXFX160N30T | IXYS | MOSFET N-CH 160A 300V PLUS247 | 531 | 1:$13.38000 10:$12.16000 100:$10.33600 250:$9.42400 500:$8.81600 1,000:$8.08640 2,500:$7.75200 5,000:$7.53920 10,000:$7.29600 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 標(biāo)準(zhǔn) |
| 漏極至源極電壓(Vdss): | 600V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 110A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 56 毫歐 @ 55A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 5V @ 8mA |
| 閘電荷(Qg) @ Vgs: | 245nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 18000pF @ 25V |
| 功率 - 最大: | 1890W |
| 安裝類型: | 通孔 |
| 封裝/外殼: | TO-264-3，TO-264AA |
| 供應(yīng)商設(shè)備封裝: | PLUS264? |
| 包裝: | 管件 |