| 元器件型號(hào) | 廠(chǎng)商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| SI7117DN-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 150V 1212-8 | 0 | 3,000:$0.41860 |
| SQ3460EV-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 8A 6TSOP | 750 | 1:$0.79000 25:$0.55440 100:$0.47520 250:$0.41040 500:$0.35280 1,000:$0.27360 |
| SI4874BDY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 12A 8-SOIC | 0 | 2,500:$0.41860 |
| SI4384DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 10A 8-SOIC | 0 | 2,500:$0.41860 |
| SI4833ADY-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 4.6A 8-SOIC | 0 | 2,500:$0.40600 |
| SQ3460EV-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 8A 6TSOP | 750 | 1:$0.79000 25:$0.55440 100:$0.47520 250:$0.41040 500:$0.35280 1,000:$0.27360 |
| 類(lèi)別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET P 通道，金屬氧化物 |
| FET 特點(diǎn): | 標(biāo)準(zhǔn) |
| 漏極至源極電壓(Vdss): | 150V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 2.17A |
| 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 1.2 歐姆 @ 500mA，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 4.5V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 12nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 510pF @ 25V |
| 功率 - 最大: | 12.5W |
| 安裝類(lèi)型: | 表面貼裝 |
| 封裝/外殼: | PowerPAK? 1212-8 |
| 供應(yīng)商設(shè)備封裝: | PowerPAK? 1212-8 |
| 包裝: | 帶卷 (TR) |