| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
|---|---|---|---|---|
| SI1303DL-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 670MA SOT323-3 | 0 | 3,000:$0.17050 |
| IRF530STRRPBF | Vishay Siliconix | MOSFET N-CH 100V 14A D2PAK | 0 | 800:$0.79514 1,600:$0.71850 2,400:$0.67060 5,600:$0.63707 20,000:$0.61073 40,000:$0.59396 |
| SI7860ADP-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V PPAK 8SOIC | 0 | 3,000:$0.79110 |
| SQD35N05-26L-GE3 | Vishay Siliconix | MOSFET N-CH D-S 55V 30A TO252 | 0 | 2,000:$1.33133 |
| SIRA02DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 50A SO-8 | 0 | 3,000:$0.76950 6,000:$0.74100 15,000:$0.71250 30,000:$0.69825 75,000:$0.68400 |
| SI1307DL-T1-GE3 | Vishay Siliconix | MOSFET P-CH 12V 850MA SOT323-3 | 0 | 3,000:$0.20925 |
| SIA448DJ-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V D-S SC70-6L | 0 | 1:$0.72000 25:$0.50040 100:$0.42900 250:$0.37052 500:$0.31850 1,000:$0.24700 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET P 通道，金屬氧化物 |
| FET 特點(diǎn): | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 20V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 670mA |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 430 毫歐 @ 1A，4.5V |
| Id 時的 Vgs(th)（最大）: | 1.4V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 2.2nC @ 4.5V |
| 輸入電容 (Ciss) @ Vds: | - |
| 功率 - 最大: | 290mW |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | SC-70，SOT-323 |
| 供應(yīng)商設(shè)備封裝: | SC-70-3 |
| 包裝: | 帶卷 (TR) |