| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| SI4860DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 11A 8-SOIC | 0 | 2,500:$1.12050 |
| SQ3419EEV-T1-GE3 | Vishay Siliconix | MOSFET P-CH 40V 7.4A 6TSOP | 0 | 1:$0.79000 25:$0.55440 100:$0.47520 250:$0.41040 500:$0.35280 1,000:$0.27360 |
| SIS436DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 25V PPAK 1212-8 | 0 | 1:$0.95000 25:$0.73120 100:$0.64500 250:$0.55900 500:$0.47300 1,000:$0.37625 |
| SIS436DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 25V PPAK 1212-8 | 0 | 1:$0.95000 25:$0.73120 100:$0.64500 250:$0.55900 500:$0.47300 1,000:$0.37625 |
| SIS436DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 25V PPAK 1212-8 | 0 | 3,000:$0.31175 6,000:$0.29025 15,000:$0.27950 30,000:$0.26875 |
| IRF9Z24STRLPBF | Vishay Siliconix | MOSFET P-CH 60V 11A D2PAK | 0 | 800:$1.11668 |
| SQ2319ES-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 40V TO-236 | 0 | 3,000:$0.30450 |
| SI4880DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 13A 8-SOIC | 0 | 2,500:$1.10700 |
| SIB411DK-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 20V PPAK SC75-6L | 0 | 3,000:$0.30450 |
| SI7804DN-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 1212-8 | 0 | 3,000:$0.30450 |
| SI4493DY-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 10A 8SOIC | 0 | 2,500:$1.10700 |
| SI4401DY-T1-GE3 | Vishay Siliconix | MOSFET P-CH 40V 8-SOIC | 0 | 2,500:$1.09755 |
| SIR882ADP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V 60A POWERPAK | 0 | 1:$2.84000 25:$2.18720 100:$1.98450 250:$1.78200 500:$1.53900 1,000:$1.29600 |
| SIR882ADP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V 60A POWERPAK | 0 | 1:$2.84000 25:$2.18720 100:$1.98450 250:$1.78200 500:$1.53900 1,000:$1.29600 |
| SIR882ADP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V 60A POWERPAK | 0 | 3,000:$1.09350 6,000:$1.05300 15,000:$1.01250 30,000:$0.99225 75,000:$0.97200 |
| SIE882DF-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 25V POLARPAK | 0 | 3,000:$1.09350 |
| IRL640STRRPBF | Vishay Siliconix | MOSFET N-CH 200V 17A D2PAK | 0 | 800:$1.09305 |
| 類(lèi)別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 邏輯電平門(mén) |
| 漏極至源極電壓(Vdss): | 30V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 11A |
| 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 8 毫歐 @ 16A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 1V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 18nC @ 4.5V |
| 輸入電容 (Ciss) @ Vds: | - |
| 功率 - 最大: | 1.6W |
| 安裝類(lèi)型: | 表面貼裝 |
| 封裝/外殼: | 8-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝: | 8-SOICN |
| 包裝: | 帶卷 (TR) |