分離式半導(dǎo)體產(chǎn)品 IRLZ44STRRPBF品牌、價(jià)格、PDF參數(shù)

IRLZ44STRRPBF • 品牌、價(jià)格
元器件型號(hào) 廠商 描述 數(shù)量 價(jià)格
IRLZ44STRRPBF Vishay Siliconix MOSFET N-CH 60V 50A D2PAK 0 800:$1.49940
SI7862ADP-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 16V PPAK 8SOIC 0 3,000:$0.87210
SI3465DV-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 3A 6-TSOP 0 3,000:$0.21750
SI3447BDV-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 4.5A 6-TSOP 0 3,000:$0.21750
SI1431DH-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 1.7A SOT363 0 3,000:$0.21750
SI5461EDC-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 20V CHIPFET 0 3,000:$0.83700
SI5459DU-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 20V CHIPFET 0 3,000:$0.22475
SI3434DV-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 4.6A 6-TSOP 0 3,000:$0.25085
SI4390DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 8.5A 8SOIC 0 2,500:$1.25550
SI8406DB-T2-E1 Vishay Siliconix MOSFET N-CH 20V D-S MICROFOOT 0 3,000:$0.21700
6,000:$0.20300
15,000:$0.18900
30,000:$0.17850
75,000:$0.17500
150,000:$0.16800
IRFBC30ASTRLPBF Vishay Siliconix MOSFET N-CH 600V 3.6A D2PAK 0 800:$0.83003
SQ2308ES-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 60V TO236 0 3,000:$0.21700
SI4368DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 17A 8-SOIC 0 2,500:$0.82485
SUD50N06-08H-E3 Vishay Siliconix MOSFET N-CH D-S 60V TO252 0 2,000:$1.71570
IRLZ24SPBF Vishay Siliconix MOSFET N-CH 60V 17A D2PAK 0 1,000:$0.90045
SI2333DS-T1-GE3 Vishay Siliconix MOSFET P-CH 12V SOT23-3 0 3,000:$0.22475
SQD25N06-22L-GE3 Vishay Siliconix MOSFET N-CH D-S 60V 25A TO252 0 2,000:$0.89100
SIE862DF-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V POLARPAK 0 3,000:$0.89100
SQ3426EEV-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 7A 6TSOP 38 1:$0.79000
25:$0.55440
100:$0.47520
250:$0.41040
500:$0.35280
1,000:$0.27360
SQ3426EEV-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 7A 6TSOP 38 1:$0.79000
25:$0.55440
100:$0.47520
250:$0.41040
500:$0.35280
1,000:$0.27360
SQ3419EEV-T1-GE3 Vishay Siliconix MOSFET P-CH 40V 7.4A 6TSOP 0 1:$0.79000
25:$0.55440
100:$0.47520
250:$0.41040
500:$0.35280
1,000:$0.27360
IRLZ44STRRPBF • PDF參數(shù)
類別: 分離式半導(dǎo)體產(chǎn)品
FET 型: MOSFET N 通道,金屬氧化物
FET 特點(diǎn): 邏輯電平門(mén)
漏極至源極電壓(Vdss): 60V
電流 - 連續(xù)漏極(Id) @ 25° C: 50A
開(kāi)態(tài)Rds(最大)@ Id, Vgs @ 25° C: 28 毫歐 @ 31A,5V
Id 時(shí)的 Vgs(th)(最大): 2V @ 250µA
閘電荷(Qg) @ Vgs: 66nC @ 5V
輸入電容 (Ciss) @ Vds: 3300pF @ 25V
功率 - 最大: 3.7W
安裝類型: 表面貼裝
封裝/外殼: TO-263-3,D²Pak(2 引線+接片),TO-263AB
供應(yīng)商設(shè)備封裝: D2PAK
包裝: 帶卷 (TR)
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