分離式半導(dǎo)體產(chǎn)品 SIHP7N60E-GE3品牌、價(jià)格、PDF參數(shù)

SIHP7N60E-GE3 • 品牌、價(jià)格
元器件型號(hào) 廠商 描述 數(shù)量 價(jià)格
SIHP7N60E-GE3 Vishay Siliconix MOSFET N CH 600V 7A TO-220AB 0 1:$2.09000
25:$1.68760
100:$1.51880
250:$1.35000
500:$1.18126
1,000:$0.97875
2,500:$0.91125
5,000:$0.87750
SIHP7N60E-GE3 • PDF參數(shù)
類別: 分離式半導(dǎo)體產(chǎn)品
FET 型: MOSFET N 通道,金屬氧化物
FET 特點(diǎn): 標(biāo)準(zhǔn)
漏極至源極電壓(Vdss): 600V
電流 - 連續(xù)漏極(Id) @ 25° C: 7A
開態(tài)Rds(最大)@ Id, Vgs @ 25° C: 600 毫歐 @ 3.5A,10V
Id 時(shí)的 Vgs(th)(最大): 4V @ 250µA
閘電荷(Qg) @ Vgs: 40nC @ 10V
輸入電容 (Ciss) @ Vds: 680pF @ 100V
功率 - 最大: 78W
安裝類型: 通孔
封裝/外殼: TO-220-3
供應(yīng)商設(shè)備封裝: TO-220AB
包裝: 散裝
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