品牌 | infineon | 型號(hào) | ihw30n90r |
批號(hào) | 10+ | 封裝 | to-247-3 |
營銷方式 | 現(xiàn)貨 | 產(chǎn)品性質(zhì) | 熱銷 |
處理信號(hào) | 數(shù)字信號(hào) | 工藝 | 混合集成 |
導(dǎo)電類型 | 雙極型 | 集成程度 | 大規(guī)模 |
規(guī)格尺寸 | 1(mm) | 工作溫度 | -40~85(℃) |
靜態(tài)功耗 | 1(mw) | 類型 | 電源模塊 |
reverse conducting igbt with monolithic body diode
features:
• 1.5v typical saturation voltage of igbt
• trench and fieldstop technology for 900 v applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in vce(sat)
• low emi
• qualified according to jedec1 for target applications
• application specific optimisation of inverse diode
• pb-free lead plating; rohs compliant
applications:
• microwave oven
• soft switching applications for zcs