參數(shù)資料
型號(hào)： K9F1G08U0M-PIB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 1Gb Gb 1.8V NAND Flash Errata
中文描述： 1Gb的NAND閃存千兆1.8V的勘誤表
文件頁數(shù)： 4/38頁
文件大?。?/td> 713K
代理商： K9F1G08U0M-PIB0
FLASH MEMORY
3
SAMSUNG
K9F1G08Q0M-YCB0,YIB0,PCB0,PIB0 K9F1G16Q0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-YCB0,YIB0,PCB0,PIB0 K9F1G16U0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-VCB0,VIB0,FCB0,FIB0
GENERAL DESCRIPTION
FEATURES
Voltage Supply
-1.8V device(K9F1GXXQ0M): 1.70V~1.95V
-3.3V device(K9F1GXXU0M): 2.7 V ~3.6 V
Organization
- Memory Cell Array
-X8 device(K9F1G08X0M) : (128M + 4,096K)bit x 8bit
-X16 device(K9F1G16X0M) : (64M + 2,048K)bit x 16bit
- Data Register
-X8 device(K9F1G08X0M): (2K + 64)bit x8bit
-X16 device(K9F1G16X0M): (1K + 32)bit x16bit
- Cache Register
-X8 device(K9F1G08X0M): (2K + 64)bit x8bit
-X16 device(K9F1G16X0M): (1K + 32)bit x16bit
Automatic Program and Erase
- Page Program
-X8 device(K9F1G08X0M): (2K + 64)Byte
-X16 device(K9F1G16X0M): (1K + 32)Word
- Block Erase
-X8 device(K9F1G08X0M): (128K + 4K)Byte
-X16 device(K9F1G16X0M): (64K + 2K)Word
Page Read Operation
- Page Size
- X8 device(K9F1G08X0M): 2K-Byte
- X16 device(K9F1G16X0M) : 1K-Word
- Random Read : 25
μ
s(Max.)
- Serial Access : 50ns(Min.)
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
Fast Write Cycle Time
- Program time : 300
μ
s(Typ.)
- Block Erase Time : 2ms(Typ.)
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
Command Register Operation
Cache Program Operation for High Performance Program
Power-On Auto-Read Operation
Intelligent Copy-Back Operation
Unique ID for Copyright Protection
Package :
- K9F1GXXX0M-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F1G08U0M-VCB0/VIB0
48 - Pin WSOP I (12X17X0.7mm)
- K9F1GXXX0M-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package
- K9F1G08U0M-FCB0/FIB0
48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package
* K9F1G08U0M-V,F(WSOPI ) is the same device as
K9F1G08U0M-Y,P(TSOP1) except package type.
Offered in 128Mx8bit or 64Mx16bit, the K9F1GXXX0M is 1G bit with spare 32M bit capacity. Its NAND cell provides the most cost-
effective solution for the solid state mass storage market. A program operation can be performed in typical 300
μ
s on the 2112-
byte(X8 device) or 1056-word(X16 device) page and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device)
or 64K-word(X16 device) block. Data in the data page can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for
address and data input/output as well as command input. The on-chip write controller automates all program and erase functions
including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take
advantage of the K9F1GXXX0M
′
s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with
real time mapping-out algorithm. The K9F1GXXX0M is an optimum solution for large nonvolatile storage applications such as solid
state file storage and other portable applications requiring non-volatility.
PRODUCT LIST
Part Number
Vcc Range
Organization
PKG Type
K9F1G08Q0M-Y,P
1.70 ~ 1.95V
X8
TSOP1
K9F1G16Q0M-Y,P
X16
K9F1G08U0M-Y,P
2.7 ~ 3.6V
X8
K9F1G16U0M-Y,P
X16
K9F1G08U0M-V,F
X8
WSOP1
相關(guān)PDF資料
PDF描述
K9F1G08U0M-VCB0 1Gb Gb 1.8V NAND Flash Errata
K9F1G08U0M-VIB0 Industrial Mid-Range Soldering Iron; Power Rating:60W; Tip Temperature:850 F; Features:Incls.: One 67D 1/4" Dia., 3-3/8" L Long-Tapered Diamond-Style Paragon Soldering Tip RoHS Compliant: Yes
K9F1G08U0M-YIB0 1Gb Gb 1.8V NAND Flash Errata
K9F1G16Q0M-PCB0 1Gb Gb 1.8V NAND Flash Errata
K9F1G16Q0M-YIB0 1Gb Gb 1.8V NAND Flash Errata
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F1G08U0M-VCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G08U0M-VIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G08U0M-YCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G08U0M-YIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G08UOC-PCB000 制造商:Samsung Semiconductor 功能描述:1GB SLC NORMAL X8 FBGA - Trays
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