參數(shù)資料
型號: DS2407
廠商: DALLAS SEMICONDUCTOR
元件分類: DRAM
英文描述: Dual Addressable Switch Plus 1K-Bit Memory(雙路可尋址開關+1K存儲器)
中文描述: 1K X 1 1-WIRE SERIAL EEPROM, PBCY3
封裝: TO-92, 3 PIN
文件頁數(shù): 20/31頁
文件大小: 200K
代理商: DS2407
DS2407
041498 20/31
DS2407 EQUIVALENT CIRCUIT
Figure 10
1–WIRE INTERFACE
5
μ
A
Typ.
100
MOSFET
T
X
R
X
DATA
GROUND
Q
Q
RESET
D
Q
D
Q
R
GROUND
10M
Typ.
“1”
PIO
ACTIVITY
LATCH
CTO PIO
1–WIRE DATA
CONTROL
EDGE
DETECTOR
CHANNEL
PIO CHANNEL
BUS MASTER CIRCUIT
Figure 11
The interface is reduced to the 5k
pull–up resistor if one does not intend to program the EPROM cells.
BUS MASTER
V
DD
TTPort Pins
R
X
T
X
5k
B) Standard TTL
V
PUP
5k
PROGRAMMING PULSE
(10 12V
BUS MASTER
V
DD
V
PUP
DS5000 OR 8051 EQUIVALENT
Open Drain
Port Pin
R
X
T
X
A) Open Drain
12V
TO DATA CONNECTION
OF DS2506
5k
10k
10k
PGM
D
S
D
S
S
D
D
S
2N7000
2N7000
2N7000
470 pF
VP0300L
OR
VP0106N3
OR
BSS110
CAPACITOR ADDED TO REDUCE
COUPLING ON DATA LINE DUE TO
PROGRAMMING SIGNAL SWITCHING
TO DATA CONNECTION
OF DS2507
The diode and Programming Pulse circuit are not required if one does not intend to program the EPROM cells.
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