
DIM375WHS06-S000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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Replaces version December 2003, issue DS5675-2.2
DS5675-3.3 February 2004
KEY PARAMETERS
V
CES
V
CE(sat)
* (typ)
I
C
I
C(PK)
*(measured at the power busbars and not the auxiliary terminals)
600V
2.1V
(max)
375A
(max)
750A
FEATURES
I
Low Forward Voltage Drop
I
Isolated Copper Baseplate
APPLICATIONS
I
Inverters
I
Motor Controllers
The Powerline range of modules includes half bridge,
chopper, bi-directional, dual and single switch configurations
covering voltages from 600V to 3300V and currents up to 3600A.
The DIM375WHS06-S000 is a half bridge 600V n channel
enhancement mode insulated gate bipolar transistor (IGBT)
module. The module is suitable for a variety of medium voltage
applications in motor drives and power conversion.
The IGBT has a wide reverse bias safe operating area
(RBSOA) for ultimate reliability in demanding applications.
These modules incorporate electrically isolated base plates
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
Typical applications include dc motor drives, ac pwm
drivesand ups systems.
.
ORDERING INFORMATION
Order as:
DIM375WHS06-S000
Note: When ordering, use complete part number.
DIM375WHS06-S000
Half Bridge IGBT Module
Fig. 1 Half bridge circuit diagram
Fig. 2 Electrical connections - (not to scale)
Outline type code:
W
(See package details for further information)
3(C1)
1(E1C2)
2(E2)
6(G
2
)
7(E
2
)
5(E
1
)
4(G
1
)