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參數資料
| 型號： | DG4599 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Single-pole/double-throw analog switches |
| 中文描述： | 單刀雙擲模擬開關 |
| 文件頁數： | 2/8頁 |
| 文件大?。?/td> | 63K |
| 代理商： | DG4599 |
DG4599
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72218
S-31059—Rev. B, 26-May-03
ABSOLUTE MAXIMUM RATINGS
Reference to GND
V+
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IN, COM, NC, NO
a
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Current (Any terminal)
Peak Current
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(Pulsed at 1 ms, 10% duty cycle)
Storage Temperature (D Suffix)
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
-0.3 to +6 V
-0.3 to (V+ + 0.3 V)
50 mA
200 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . .
-65 to 125
°
C
Power Dissipation (Packages)
b
6-Pin SO70
c
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
250 mW
Notes:
a.
Signals on NC, NO, or COM or IN exceeding V+ will be clamped by
internal diodes. Limit forward diode current to maximum current ratings.
All leads welded or soldered to PC Board.
Derate 6.5 mW/ C above 75 C
b.
c.
SPECIFICATIONS (V+ = 5 V)
Test Conditions
Otherwise Unless Specified
Limits
-40 to 85 C
Parameter
Symbol
V+ = 5 V,
10%, V
IN
= 0.8 or 2.4 V
e
Temp
a
Min
b
Typ
c
Max
b
Unit
Analog Switch
Analog Signal Range
d
V
NO
, V
NC
,
V
COM
Full
0
V+
V
Drain-Source On-Resistance
r
DS(on)
V+ = 4.5 V, V
D
= 3 V, I
S
= 10 mA
Room
Full
7
10
60
65
r
DS(on)
Flatness
d
r
Flatness
V+ = 2.5 V
Room
2
Switch Off Leakage Current
I
S(off)
V+ = 5.5 V
Room
Full
-1.0
-4.0
1.0
4.0
I
D(off)
V
S
= 1 V/4.5 V, V
D
= 4.5 V/1 V
Room
Full
-1.0
-4.0
1.0
4.0
nA
Channel-On Leakage Current
I
D(on)
V+ = 5.5 V, V
S
= V
D
= 1 V/4.5 V
Room
Full
-1.0
-3.0
1.0
4.5
Digital Control
Input High Voltage
V
INH
Full
2.4
V
Input Low Voltage
V
INL
Full
0.8
Input Capacitance
C
in
Full
3
pF
Input Current
I
INL
or I
INH
V
IN
= 0 or V+
Full
-1
1
A
Dynamic Characteristics
Turn-On Time
d
t
ON
V V 3 V R = 300 , C 35 F
or V
= 3 V, R
L
= 35 pF
Figure 1 and 2
Room
Full
9
30
40
Turn-Off Time
d
t
OFF
Room
Full
5
25
30
ns
Break-Before-Make Time
d
t
d
Room
1
4
Charge Injection
d
Q
INJ
C
= 1 nF, V
= 0 V
V
GEN
= 0 V, R
GEN
= 0 , Figure 3
Room
5
10
pC
Off-Isolation
d
OIRR
R
L
= 50 , C
= 5 pF, f = 1 MHz
L
= 5 pF f = 1 MHz
Room
-73
dB
Crosstalk
d
X
TALK
Room
-70
Source-Off Capacitance
d
C
S(off)
Room
7
Channel-On Capacitance
d
C
D(on)
V
= 0 or V+, f = 1 MHz
IN
Room
20
pF
Drain-to-Source Capacitance
d
C
DS(off)
Room
20
Power Supply
Power Supply Range
V+
4.5
5.5
V
Power Supply Current
I+
V
IN
= 0 or V+
0.01
1.0
A
Power Consumption
P
C
5.5
W
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