參數(shù)資料
型號(hào)： DG445BDJ
廠商： Vishay Intertechnology,Inc.
英文描述： Improved Quad SPST CMOS Analog Switches
中文描述： 改進(jìn)的四路SPST CMOS模擬開關(guān)
文件頁數(shù)： 2/7頁
文件大?。?/td> 115K
代理商： DG445BDJ
DG444B/445B
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72626
S-32554—Rev. A, 15-Dec-03
ABSOLUTE MAXIMUM RATINGS
V+ to V
44 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GND to V
25 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
L
Digital Inputs
a
V
S
, V
D
(GND
0.3 V) to (V+) + 0.3 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(V
)
2 V to (V+) +2 V
. . . . . . . . . . . . . . . . . . . . . . . . . . .
or 30 mA, whichever occurs first
Continuous Current (Any Terminal)
30 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Current, S or D (Pulsed 1 ms, 10% duty cycle)
100 mA
. . . . . . . . . . . . . . . . . .
Storage Temperature
65 to 125 C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (Package)b
16-Pin Plastic DIP
c
16-Pin Narrow Body SOIC
d
QFN-16
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
470 mW
640 mW
850 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes:
a.
Signals on S
, D
, or IN
exceeding V+ or V
will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
All leads welded or soldered to PC Board.
Derate 6 mW/ C above 75 C
Derate 8 mW/ C above 75 C
b.
c.
d.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS FOR DUAL SUPPLIES
Test Conditions
Unless Otherwise Specified
Limits
40 to 85 C
Parameter
Symbol
V+ = 15 V, V
=
15 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
e
Temp
a
Min
b
Typ
c
Max
b
Unit
Analog Switch
Analog Signal Range
d
V
ANALOG
Full
15
15
V
Drain-Source On-Resistance
r
DS(on)
I
S
= 1 mA, V
D
=
10 V
Room
Full
45
80
95
Switch Off Leakage Current
I
S(off)
V
D
=
14 V V
14 V, V
S
=
14 V
Room
Full
0.5
5
0.01
0.5
5
I
D(off)
Room
Full
0.5
5
0.01
0.5
5
nA
Channel On Leakage Current
I
D(on)
V
S
= V
D
=
14 V
Room
Full
0.5
10
0.02
0.5
10
Digital Control
Input Voltage Low
V
INL
V
INH
Full
0.8
V
Input Voltage High
Full
2.4
Input Current V
IN
Low
Input Current V
IN
High
I
INL
I
INH
V
IN
under test = 0.8 V, All Other = 2.4 V
V
IN
under test = 2.4 V, All Other = 0.8 V
Full
1
0.01
1
A
Full
1
0.01
1
Dynamic Characteristics
Turn-On Time
t
ON
t
OFF
R
L
= 1 k
V
S
=
10 V, See Figure 2
Room
300
Turn-Off Time
, C
= 35 pF
Room
200
ns
Charge Injection
e
Q
C
L
= 1 nF, V
S
= 0 V
V
gen
= 0 V, R
gen
= 0
Room
1
pC
Off Isolation
e
Crosstalk (Channel-to-Channel)
d
OIRR
R
L
= 50
f = 100 kHz
Room
90
dB
X
TALK
C
S(off)
C
D(off)
C
D(on)
, C
= 15 pF, V
S
= 1 V
RMS
Room
95
Source Off Capacitance
= 0 V f = 100 kHz
V
S
= 0 V, f = 100 kHz
Room
5
Drain Off Capacitance
Room
5
pF
Channel On Capacitance
V
S
V
D
= 0 V, f = 1 MHz
Room
16
Power Supplies
Positive Supply Current
I+
Room
Full
1
5
Negative Supply Current
I
V
IN
= 0 or 5 V
Room
Full
1
5
A
Logic Supply Current
I
IN
Room
Full
1
5
相關(guān)PDF資料
PDF描述
DG445B Improved Quad SPST CMOS Analog Switches
DG445BDN Improved Quad SPST CMOS Analog Switches
DG445BDY Improved Quad SPST CMOS Analog Switches
DG445 Quad SPST CMOS Analog Switches(功率損耗22nW，快速轉(zhuǎn)換時(shí)間120ns的四單刀單擲CMOS模擬開關(guān))
DG444 Quad SPST CMOS Analog Switches(功率損耗22nW，快速轉(zhuǎn)換時(shí)間120ns的四單刀單擲CMOS模擬開關(guān))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DG445BDJ-E3 功能描述:模擬開關(guān) IC Hi-Speed Quad SPST RoHS:否 制造商:Texas Instruments 開關(guān)數(shù)量:2 開關(guān)配置:SPDT 開啟電阻（最大值）:0.1 Ohms 切換電壓（最大）: 開啟時(shí)間（最大值）: 關(guān)閉時(shí)間（最大值）: 工作電源電壓:2.7 V to 4.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DSBGA-16
DG445BDN 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Improved Quad SPST CMOS Analog Switches
DG445BDN-T1-E4 功能描述:模擬開關(guān) IC Hi-Speed Quad SPST RoHS:否 制造商:Texas Instruments 開關(guān)數(shù)量:2 開關(guān)配置:SPDT 開啟電阻（最大值）:0.1 Ohms 切換電壓（最大）: 開啟時(shí)間（最大值）: 關(guān)閉時(shí)間（最大值）: 工作電源電壓:2.7 V to 4.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DSBGA-16
DG445BDY 功能描述:模擬開關(guān) IC Hi-Speed Quad SPST RoHS:否 制造商:Texas Instruments 開關(guān)數(shù)量:2 開關(guān)配置:SPDT 開啟電阻（最大值）:0.1 Ohms 切換電壓（最大）: 開啟時(shí)間（最大值）: 關(guān)閉時(shí)間（最大值）: 工作電源電壓:2.7 V to 4.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DSBGA-16
DG445BDY-E3 功能描述:模擬開關(guān) IC Hi-Speed Quad SPST RoHS:否 制造商:Texas Instruments 開關(guān)數(shù)量:2 開關(guān)配置:SPDT 開啟電阻（最大值）:0.1 Ohms 切換電壓（最大）: 開啟時(shí)間（最大值）: 關(guān)閉時(shí)間（最大值）: 工作電源電壓:2.7 V to 4.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DSBGA-16
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