參數(shù)資料
型號: DG444
廠商: Vishay Intertechnology,Inc.
英文描述: Quad SPST CMOS Analog Switches(功率損耗22nW,快速轉(zhuǎn)換時間120ns的四單刀單擲CMOS模擬開關(guān))
中文描述: 改進(jìn)的四路、SPST模擬開關(guān)
文件頁數(shù): 2/8頁
文件大?。?/td> 68K
代理商: DG444
DG444/445
Vishay Siliconix
www.vishay.com
2
Document Number: 70054
S-52433
Rev. F, 06-Sep-99
V+ to V
GND to V
V
L
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Digital Inputs
a
V
S
, V
D
. . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Current (Any Terminal)
Current, S or D (Pulsed 1 ms, 10% duty cycle)
Storage Temperature
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
44 V
25 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(GND
0.3 V) to (V+) + 0.3 V
(V
)
2 V to (V+) +2 V
or 30 mA, whichever occurs first
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . .
30 mA
100 mA
65 to 125 C
Power Dissipation (Package)b
16-Pin Plastic DIP
c
16-Pin Narrow Body SOIC
d
450 mW
640 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes:
a.
Signals on S
, D
, or IN
exceeding V+ or V
will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
All leads welded or soldered to PC Board.
Derate 6 mW/ C above 75 C
Derate 8 mW/ C above 75 C
b.
c.
d.
Test Conditions
Unless Otherwise Specified
D Suffix
40 to 85 C
Parameter
Symbol
V+ = 15 V, V
=
15 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
e
Temp
a
Min
b
Typ
c
Max
b
Unit
Analog Switch
Analog Signal Range
d
V
ANALOG
Full
15
15
V
Drain-Source On-Resistance
r
DS(on)
I
S
=
10 mA, V
D
=
V+ = 13.5 V, V
=
13.5 V
8.5 V
Room
Full
50
85
100
I
S(off)
V+ = 16.5, V
=
16.5 V
V
D
=
15.5 V, V
S
=
Room
Full
0.5
5
0.01
0.5
5
Switch Off Leakage Current
I
D(off)
15.5 V
Room
Full
0.5
5
0.01
0.5
5
nA
Channel On Leakage Current
I
D(on)
V+ = 16.5 V, V
=
16.5 V
V
S
= V
D
=
15.5 V
Room
Full
0.5
10
0.08
0.5
10
Digital Control
Input Current V
IN
Low
I
IL
V
IN
under test = 0.8 V
All Other = 2.4 V
Full
500
0.01
500
Input Current V
IN
High
I
IH
V
IN
under test = 2.4 V
All Other = 0.8 V
Full
500
0.01
500
nA
Dynamic Characteristics
Turn-On Time
t
ON
Room
120
250
R
L
= 1 k
V =
S
=
, C
= 35 pF
10 V, See Figure 2
DG444
Room
110
140
ns
Turn-Off Time
t
OFF
DG445
Room
160
210
Charge Injection
e
Q
C
L
= 1 nF, V
S
= 0 V
V
gen
= 0 V, R
gen
= 0
Room
1
pC
Off Isolation
e
Crosstalk (Channel-to-Channel)
d
OIRR
Room
60
X
TALK
C
S(off)
C
D(off)
C
D(on)
R
L
= 50
, C
L
= 5 pF, f = 1 MHz
Room
100
dB
Source Off Capacitance
Room
4
Drain Off Capacitance
f = 1 MHz
Room
4
pF
Channel On Capacitance
V
ANALOG
= 0 V
Room
16
Power Supplies
Positive Supply Current
I+
Room
Full
0.001
1
5
Negative Supply Current
I
V+ = 16.5 V, V
=
16.5 V
V
IN
= 0 or 5 V
Room
Full
1
5
0.0001
Logic Supply Current
I
L
Room
Full
0.001
1
5
A
Ground Current
I
GND
Room
Full
1
5
0.001
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