
DG441B/442B
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72625
S-32553—Rev. A, 15-Dec-03
ABSOLUTE MAXIMUM RATINGS
V+ to V
44 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GND to V
25 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Digital Inputs
a
V
S
, V
D
(V
)
2 V to (V+) +2 V
. . . . . . . . . . . . . . . . . . . . . . . . . . .
or 30 mA, whichever occurs first
Continuous Current (Any Terminal)
30 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Current, S or D (Pulsed 1 ms, 10% duty cycle)
100 mA
. . . . . . . . . . . . . . . . . .
Storage Temperature
65 to 125 C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (Package)b
16-Pin Plastic DIP
c
16-Pin Narrow Body SOIC
d
QFN-16
d
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
470 mW
900 mW
850 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes:
a.
Signals on S
, D
, or IN
exceeding V+ or V
will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
All leads welded or soldered to PC Board.
Derate 6 mW/ C above 75 C
Derate 12 mW/ C above 25 C
b.
c.
d.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS
a
FOR DUAL SUPPLIES
Test Conditions
Unless Otherwise Specified
Limits
40 to 85 C
Parameter
Symbol
V+ = 15 V, V
=
15 V, V
L
= 5 V. V
IN
= 2.4 V,
0.8 V
f
Temp
b
Min
d
Typ
c
Max
d
Unit
Analog Switch
Analog Signal Range
e
V
ANALOG
Full
15
15
V
Drain-Source
On-Resistance
r
DS(on)
I
S
= 1 mA, V
D
=
10 V
Room
Full
45
80
95
On-Resistance Match Between
Channels
e
r
DS(on)
I
S
= 1 mA, V
D
=
10 V
Room
Full
2
4
5
Switch Off
Leakage Current
I
S(off)
V
D
=
14 V V
14 V, V
S
=
14 V
Room
Full
0.5
5
0.01
0.5
5
I
D(off)
Room
Full
0.5
5
0.01
0.5
5
nA
Channel On
Leakage Current
I
D(on)
V
S
= V
D
=
14 V
Room
Full
0.5
10
0.02
0.5
10
Digital Control
Input Voltage Low
V
INL
V
INH
I
INL
I
INH
Full
0.8
V
Input Voltage High
Full
2.4
Input Current V
IN
Low
Input Current V
IN
High
Dynamic Characteristics
V
IN
under test = 0.8 V, All Other = 2.4 V
V
IN
under test = 2.4 V, All Other = 0.8 V
Full
1
0.01
1
A
Full
1
0.01
1
Turn-On Time
t
ON
t
OFF
Q
R
L
= 1 k
V
S
= 10 V, See Figure 2
Room
120
220
Turn-Off Time
Charge Injection
e
Off Isolation
e
, C
= 35 pF
Room
65
120
ns
C
L
= 1 nF, V
S
= 0 V, V
gen
= 0 V, R
gen
= 0
Room
1
pC
OIRR
R
L
= 50
f = 100 kHz
Room
90
dB
Crosstalke (Channel-to-Channel)
Source Off Capacitance
e
Drain Off Capacitance
e
Channel On Capacitance
e
X
TALK
C
S(off)
C
D(off)
C
D(on)
, C
= 15 pF, V
S
= 1 V
RMS
Room
95
f = 1 MHz
Room
4
Room
4
pF
V
S
= V
D
= 0 V, f = 1 MHz
Room
16
Power Supplies
Positive Supply Current
I+
V+ = 16.5 V, V
=
16.5 V
V
IN
= 0 or 5 V
Room
Full
1
5
A
Negative Supply Current
I
Room
Full
1
5