
DG428/429
Vishay Siliconix
Document Number: 70063
S-52433
—
Rev. J, 06-Sep-99
www.vishay.com
3
Voltage Referenced to V
–
V+
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GND
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Digital Inputs
a
, V
S
, V
D
. . . . . . . . . . . . . . . . . . . . . . . .
44 V
25 V
(V
–
)
–
2 V to (V+) +2 V or
30 mA, whichever occurs first
Current (Any Terminal)
Peak Current, S or D
(Pulsed at 1 ms, 10% Duty Cycle Max)
Storage Temperature
30 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100 mA
. . . . . . . . . . . . . . . . . . . . . . . .
(AK Suffix)
. . . . . . . . . . . . . . . . . .
(DJ, DN Suffix)
. . . . . . . . . . . . . .
–
65 to 150 C
–
65 to 125 C
Power Dissipation (Package)
b
18-Pin Plastic DIP
c
18-Pin CerDIP
d
20-Pin PLCC
f
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
28-Pin Widebody SOIC
f
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
470 mW
900 mW
800 mW
450 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes:
a.
Signals on S
, D
or IN
exceeding V+ or V
–
will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
All leads soldered or welded to PC board.
Derate 6.3 mW/ C above 75 C.
Derate 12 mW/ C above 75 C.
Derate 10 mW/ C above 75 C.
Derate 6 mW/ C above 75 C.
b.
c.
d.
e.
f.
Test Conditions
Unless Otherwise Specified
A Suffix
–
55 to 125 C
D Suffix
–
40 to 85 C
Parameter
Symbol
V+ = 15 V, V
–
=
–
15 V, WR = 0,
RS = 2.4 V, V
IN
= 2.4 V, 0.8 V
f
Temp
b
Typ
c
Min
d
Max
d
Min
d
Max
d
Unit
Analog Switch
Analog Signal Range
e
V
ANALOG
Full
–
15
15
–
15
15
V
Drain-Source
On-Resistance
r
DS(on)
V
D
=
I
S
=
–
1 mA, V
AH
= 2.4 V
–
10 V < V
< 10 V
I
S
=
–
1 mA
V
S
=
10 V, V
=
V
EN
= 0 V
10 V, V
AL
= 0.8 V
Room
Full
55
100
125
100
125
Greatest Change in r
DS(on)
Between Channels
g
r
DS(on)
Room
5
%
Source Off
Leakage Current
I
S(off)
10 V
Room
Full
0.03
–
0.5
–
50
0.5
50
–
0.5
–
50
0.5
50
Drain Off
Leakage Current
V
D
=
V
S
=
V
EN
= 0 V
10 V
10 V
DG428
Room
Full
0.07
–
1
–
100
1
100
–
1
–
100
1
100
I
D(off)
DG429
Room
Full
0.05
–
1
–
50
1
50
–
1
–
50
1
50
nA
Drain On
Leakage Current
V
S
= V
D
=
V
EN
= 2.4 V
V
AL
= 0.8 V
V
AH
= 2.4 V
10 V
DG428
Room
Full
0.07
–
1
–
100
1
100
–
1
–
100
1
100
I
D(on)
DG429
Room
Full
0.05
–
1
–
50
1
50
–
1
–
50
1
50
Digital Control
Logic Input Current
Input Voltage High
V
A
= 2.4 V
V
A
= 15 V
Full
0.01
1
1
I
AH
Full
0.01
1
1
A
Logic Input Current
Input Voltage Low
I
AL
V
EN
= 0 V, 2.4 V, V
= 0 V
RS = 0 V, WR = 0 V
Full
–
0.01
–
1
–
1
Logic Input Capacitance
C
in
f = 1 MHz
Room
8
pF
Dynamic Characteristics
Transition Time
t
TRANS
See Figure 5
Room
Full
150
250
300
250
300
Break-Before-Make Interval
t
OPEN
See Figure 4
Full
30
10
10
Enable and Write
Turn-On Time
t
ON(EN,WR)
See Figures 6 and 7
Room
Full
90
150
225
150
225
ns
Enable and Reset
Turn-Off Time
t
OFF(EN,RS)
See Figures 6 and 8
Room
Full
55
150
300
150
300
Charge Injection
Q
V
GEN
= 0 V, R
GEN
= 0
C
L
Room
1
pC
Off Isolation
OIRR
V
EN
= 0 V, R
L
= 300
V
S
= 7 V
RMS,
f = 100 kHz
V
S
= 0 V, V
EN
= 0 V, f = 1 MHz
C
= 15 pF
Room
–
75
dB
Source Off Capacitance
C
S(off)
Room
11
DG428
Room
40
Drain Off Capacitance
C
D(off)
V
D
= 0 V, V
= 0 V
f = 1 MHz
DG429
Room
20
pF
DG428
Room
54
Drain On Capacitance
C
D(on)
DG429
Room
34