| 型號 | 廠商 | 描述 |
| irf320 2 3 4 5 |
SAMSUNG SEMICONDUCTOR CO. LTD. | N-CHANNEL POWER MOSFETS |
| irf321 2 3 4 5 |
SAMSUNG SEMICONDUCTOR CO. LTD. | N-CHANNEL POWER MOSFETS |
| irf322 2 3 4 5 |
SAMSUNG SEMICONDUCTOR CO. LTD. | N-CHANNEL POWER MOSFETS |
| irf323 2 3 4 5 |
SAMSUNG SEMICONDUCTOR CO. LTD. | N-CHANNEL POWER MOSFETS |
| irf320 2 3 4 5 |
HARRIS SEMICONDUCTOR | 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs |
| irf321 2 3 4 5 |
HARRIS SEMICONDUCTOR | 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs |
| irf322 2 3 4 5 |
HARRIS SEMICONDUCTOR | 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs |
| irf323 2 3 4 5 |
HARRIS SEMICONDUCTOR | 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs |
| irf722 2 3 4 5 |
International Rectifier | TRANSISTORS N-CHANNEL |
| irf723 2 3 4 5 |
International Rectifier | TRANSISTORS N-CHANNEL |
| irf721 2 3 4 5 |
International Rectifier | TRANSISTORS N-CHANNEL |
| irf722 2 3 4 5 |
Fairchild Semiconductor Corporation | RES 681-OHM 1% 0.125W 100PPM THICK-FILM SMD-0805 5K/REEL-7IN-PA |
| irf723 2 3 4 5 |
Fairchild Semiconductor Corporation | N-Channel Power MOSFETs, 3.0 A, 350-400 V |
| irf320-323 2 3 4 5 |
Fairchild Semiconductor Corporation | N-Channel Power MOSFETs, 3.0 A, 350-400 V |
| irf320 2 3 4 5 |
Fairchild Semiconductor Corporation | N-Channel Power MOSFETs, 3.0 A, 350-400 V |
| irf321 2 3 4 5 |
Fairchild Semiconductor Corporation | N-Channel Power MOSFETs, 3.0 A, 350-400 V |
| irf322 2 3 4 5 |
Fairchild Semiconductor Corporation | N-Channel Power MOSFETs, 3.0 A, 350-400 V |
| irf323 2 3 4 5 |
Fairchild Semiconductor Corporation | N-Channel Power MOSFETs, 3.0 A, 350-400 V |
| irf730a 2 3 4 5 6 7 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Power MOSFET(N溝道增強(qiáng)型功率MOS場效應(yīng)管(漏源電壓為400V,導(dǎo)通電阻為1.5Ω,漏電流為5.5A)) |
| irf731 2 3 4 5 6 |
Fairchild Semiconductor Corporation | N-Channel Power MOSFETs, 5.5A, 350 V/400V |
| irf330 2 3 4 5 6 |
SAMSUNG SEMICONDUCTOR CO. LTD. | N-CHANNEL POWER MOSFETS |
| irf331 2 3 4 5 6 |
SAMSUNG SEMICONDUCTOR CO. LTD. | N-CHANNEL POWER MOSFETS |
| irf332 2 3 4 5 6 |
SAMSUNG SEMICONDUCTOR CO. LTD. | N-CHANNEL POWER MOSFETS |
| irf333 2 3 4 5 6 |
SAMSUNG SEMICONDUCTOR CO. LTD. | N-CHANNEL POWER MOSFETS |
| irf330 2 3 4 5 6 |
HARRIS SEMICONDUCTOR | 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET |
| irf330 2 3 4 5 6 |
International Rectifier | TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=1.00ohm, Id=5.5A) |
| irf330 2 3 4 5 6 |
Fairchild Semiconductor Corporation | N-Channel Power MOSFETs, 5.5A, 350 V/400V |
| irf330-333 2 3 4 5 6 |
Fairchild Semiconductor Corporation | N-Channel Power MOSFETs, 5.5A, 350 V/400V |
| irf331 2 3 4 5 6 |
Fairchild Semiconductor Corporation | N-Channel Power MOSFETs, 5.5A, 350 V/400V |
| irf332 2 3 4 5 6 |
Fairchild Semiconductor Corporation | N-Channel Power MOSFETs, 5.5A, 350 V/400V |
| irf333 2 3 4 5 6 |
Fairchild Semiconductor Corporation | N-Channel Power MOSFETs, 5.5A, 350 V/400V |
| irf732 2 3 4 5 6 |
Fairchild Semiconductor Corporation | N-Channel Power MOSFETs, 5.5A, 350 V/400V |
| irf733 2 3 4 5 6 |
Fairchild Semiconductor Corporation | N-Channel Power MOSFETs, 5.5A, 350 V/400V |
| irf740a 2 3 4 5 6 7 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Power MOSFET(N溝道增強(qiáng)型功率MOS場效應(yīng)管(漏源電壓為400V,導(dǎo)通電阻為0.55Ω,漏電流為10A)) |
| irf820b 2 3 4 5 6 7 8 9 10 |
FAIRCHILD SEMICONDUCTOR CORP | 500V N-Channel MOSFET |
| irfs820b 2 3 4 5 6 7 8 9 10 |
FAIRCHILD SEMICONDUCTOR CORP | 500V N-Channel MOSFET |
| irf830a 2 3 4 5 6 7 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Power MOSFET(N溝道增強(qiáng)型功率MOS場效應(yīng)管(漏源電壓為500V,導(dǎo)通電阻為1.5Ω,漏電流為4.5A)) |
| irf830b 2 3 4 5 6 7 8 9 10 |
FAIRCHILD SEMICONDUCTOR CORP | 500V N-Channel MOSFET |
| irfs830b 2 3 4 5 6 7 8 9 10 |
FAIRCHILD SEMICONDUCTOR CORP | 500V N-Channel MOSFET |
| irf830s 2 3 4 5 6 7 |
Fairchild Semiconductor Corporation | N-Channel Power MOSFET(N溝道增強(qiáng)型功率MOS場效應(yīng)管(漏源電壓為500V,導(dǎo)通電阻為1.5Ω,漏電流為4.5A)) |
| irf831 2 3 4 5 6 |
Fairchild Semiconductor Corporation | N-Channel Power MOSFETs, 4.5 A, 450V/500V |
| irf430 2 3 4 5 6 |
SAMSUNG SEMICONDUCTOR CO. LTD. | N-CHANNEL POWER MOSFETS |
| irf431 2 3 4 5 6 |
SAMSUNG SEMICONDUCTOR CO. LTD. | N-CHANNEL POWER MOSFETS |
| irf432 2 3 4 5 6 |
SAMSUNG SEMICONDUCTOR CO. LTD. | N-CHANNEL POWER MOSFETS |
| irf433 2 3 4 5 6 |
SAMSUNG SEMICONDUCTOR CO. LTD. | N-CHANNEL POWER MOSFETS |
| irf430 2 3 4 5 6 |
HARRIS SEMICONDUCTOR | 4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET |
| irf430 2 3 4 5 6 |
International Rectifier | TRANSISTORS N-CHANNEL(Vdss=500V, Rds(on)=1.5ohm, Id=4.5A) |
| irf430 2 3 4 5 6 |
Fairchild Semiconductor Corporation | N-Channel Power MOSFETs, 4.5 A, 450V/500V |
| irf430-433 2 3 4 5 6 |
Fairchild Semiconductor Corporation | N-Channel Power MOSFETs, 4.5 A, 450V/500V |
| irf431 2 3 4 5 6 |
Fairchild Semiconductor Corporation | N-Channel Power MOSFETs, 4.5 A, 450V/500V |